Studies on the structure and electrical characteristics of oxide layers synthesized by reactive ion implantation into tantalum

Singh, Vibha; Yadav, A.D.; Dubey, S. K.; Panigrahi, B. K.; Arora, B. M.

doi:10.1016/j.surfcoat.2009.02.083

Cited by 3 publications

(3 citation statements)

References 23 publications

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“…These values are plotted against the ion dose as shown in Figure 11. The resistivity changes a little steeper, after first ion dose, from 7.3 × 10 −8 to 20.2 × 10 −8 Ω m (174.7%), then an almost linear increase, for the second dose, 22.6 × 10 −8 Ω m (206.9%) and, third dose, 24.6 × 10 −8 Ω m (234.8%) [45,46] where it falls to, after the last dose, 11.8 × 10 −8 Ω m (60.9%). This final value is still higher than that of the untreated sample.…”

Section: Resultsmentioning

confidence: 99%

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Surface characterisation of brass alloy in the correlation of hardness and electrical resistivity by carbon ion implantation

Shahnawaz

Nawaz

2021

Materials Science and Technology

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Material modification, as per demand of era, has been explored by several groups in different areas focusing its engineering prospect for better performance. Carbon ion implantation, using four different doses, has been done on α-brass (64% Cu; 36% Zn) to see its effects on hardness, microstructure and electrical resistivity. Carbon ions distorted the crystalline surface, increased defect density and hardened the surface by 13.2%. The crystallite size was found decreased by 41.15%, which in turn caused a significant increase in electrical resistivity, i.e. 234.8%. Overall, the lattice parameter found increased from 3.680 to 3.688 Å. SEM morphology exhibited nonuniform agglomerations in the form of pits, cracks, voids, cavities, craters, particulates, droplets and petals like structures at the surface by carbon ion implantation.

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Section: Resultsmentioning

confidence: 99%

“…These values are plotted against the ion dose as shown in Figure 11. 24.6 × 10 −8 Ω m (234.8%) [45,46] where it falls to, after the last dose, 11.8 × 10 −8 Ω m (60.9%). This final value is still higher than that of the untreated sample.…”

Section: Electrical Resistivitymentioning

confidence: 99%

Surface characterisation of brass alloy in the correlation of hardness and electrical resistivity by carbon ion implantation

Shahnawaz

Nawaz

2021

Materials Science and Technology

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“…[18][19][20] Although the implantation of oxygen has been applied to the study of the formation of MeO x binary systems, 21,22 IBM has never been employed as a route to obtain mixed oxides, to our knowledge. 23 The main objective of this work is to assess the potential use of IBM to obtain mixed Cr-Si oxide thin films whose properties can be tuned between those of each of the constituent binary oxides so as to use them as films with a variable refractive index for functional and/or structural applications. In particular, we have performed an extensive multi-technique depth profile characterisation of the implanted films by means of Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis using a time of flight configuration (ERDA-ToF), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM), and compared the results with Monte Carlo TRIDYN simulations.…”

Section: Introductionmentioning

confidence: 99%

In-depth multi-technique characterization of chromium–silicon mixed oxides produced by reactive ion beam mixing of the Cr/Si interface

Galindo

Benito

Duday³

et al. 2012

J. Anal. At. Spectrom.

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The great interest of mixed metal-silicon oxides lies in their suitability, among other applications, as optical coatings with an adjustable refractive index. In this paper we investigate a new method to obtain chromium and silicon mixed oxides. Using as starting point a metallic chromium film deposited on a silicon substrate by magnetron sputtering, we induce the formation of mixed oxides using reactive ion beam mixing by bombarding the Cr/Si interface with oxygen. We have varied the ion fluence (between 5 Â 10 16 and 1 Â 10 18 ions cm À2 ) at a fixed implantation energy of 80 keV in order to modify the final composition of the coating. The composition profiles have been obtained with Rutherford backscattering spectroscopy (RBS), by changing the He energy from 3.035 up to 3.105 MeV, and with elastic recoil detection analysis using a time of flight configuration (ERDA-ToF). Results have been compared with those obtained from secondary ion mass spectrometry (SIMS) depth profiles and Monte Carlo TRIDYN simulations. Concentration depth profiles (CDP) have been also measured using X-ray photoelectron spectroscopy (XPS) and simultaneous Ar + bombardment, as well as angle-resolved X-ray photoelectron spectroscopy (ARXPS). All the obtained depth profiles agree remarkably well with cross-section transmission electron microscopy (TEM) observations made on the sample implanted at the highest fluence.

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High-rate reactive high-power impulse magnetron sputtering of Ta–O–N films with tunable composition and properties

et al. 2014

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Studies on the structure and electrical characteristics of oxide layers synthesized by reactive ion implantation into tantalum

Cited by 3 publications

References 23 publications

Surface characterisation of brass alloy in the correlation of hardness and electrical resistivity by carbon ion implantation

Surface characterisation of brass alloy in the correlation of hardness and electrical resistivity by carbon ion implantation

In-depth multi-technique characterization of chromium–silicon mixed oxides produced by reactive ion beam mixing of the Cr/Si interface

High-rate reactive high-power impulse magnetron sputtering of Ta–O–N films with tunable composition and properties

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