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We have investigated the characteristics of B 2 H 6 plasma doping (PLAD) process used to convert the n + doped poly-Si gate to the p + poly-Si gate for pMOS. The throughput of the PLAD process is much higher than a conventional beam line implantation process at low energy and high dose ranges. The B 2 H 6 plasma counter-doping on the n + poly-Si were performed in the energy range of 5kV ~ 9kV and dose of ~E16#/cm 2. The B 2 H 6 Plasma doped poly-Si layers were characterized by TDS, SIMS, AFM, and TEM. The TDS analysis showed hydrogen desorption from the B 2 H 6 plasma doped p + poly-Si layer at a low temperature. The surface concentration of PLAD doped boron was much higher compared to the conventional beam line implantation. However, a serious loss of surface dopant was also observed during photoresist strip and post cleaning. The surface dopant loss could be suppressed by 10% with optimization of the cleaning condition, leading to improve characteristics of PLAD doped p + poly-Si pMOS, compared to the beam line implantation. Moreover, flat band voltage (V FB) shift was not observed in the C-V curves and there was no significant difference in I-V characteristics between PLAD and the conventional ion implantation. Deeper and higher dopant profile will be helpful to decrease required dose gap between PLAD and beam line implantation.