2016
DOI: 10.1016/j.ijleo.2016.01.050
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Studies on the structure optical and electrical properties of Zn-doped NiO thin films grown by spray pyrolysis

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Cited by 54 publications
(18 citation statements)
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“…Thangamani and Pushpanathan [50] also reported the decrease in band from 3.70 to 3.58 eV with increasing Zn concentration from 0 to 5% in NiO prepared by chemical precipitation method. Similar observation, i.e., decrease in band gap with increasing Zn concentration, has also been reported for Zn-doped NiO thin film cases [41,[54][55][56]. In contrary to the literature, our study indicated that the band gap of NiO increased from 3.58 to 3.81 eV with increasing of Zn concentration 0 to 7% in Ni 1−x Zn x O/Ni nanocomposites and thereafter the band gap slightly decreases for 10% Zn-doped NiO/Ni sample ( Fig.…”
Section: Optical Propertiessupporting
confidence: 86%
“…Thangamani and Pushpanathan [50] also reported the decrease in band from 3.70 to 3.58 eV with increasing Zn concentration from 0 to 5% in NiO prepared by chemical precipitation method. Similar observation, i.e., decrease in band gap with increasing Zn concentration, has also been reported for Zn-doped NiO thin film cases [41,[54][55][56]. In contrary to the literature, our study indicated that the band gap of NiO increased from 3.58 to 3.81 eV with increasing of Zn concentration 0 to 7% in Ni 1−x Zn x O/Ni nanocomposites and thereafter the band gap slightly decreases for 10% Zn-doped NiO/Ni sample ( Fig.…”
Section: Optical Propertiessupporting
confidence: 86%
“…The differences a − a 0 of (111) crystal plane are given by the following relation [6]: where a 0 is the standard lattice parameter of NiO (standard a 0 = 0.4176 nm). The crystallite size of (111) crystal plane for the fabricated NiO thin films was calculated from the Scherer's formula [7]:…”
Section: Methodsmentioning
confidence: 99%
“…The graph in Fig. 3 was plotted according to the following equation [14]: (3) where A is the absorbance, d is the film thickness; T is the transmission spectra of thin films; α is the absorption coefficient values; C is a constant, hv is the photon energy, and Eg is the band gap energy of the semiconductor.…”
Section: Fig 2 -Optical Transmittance Spectra Of Nio Thin Films As Amentioning
confidence: 99%