Studies on ZnO/p-Si Heterojunctions Fabricated by a Modified CVD Method

Basu, S.; Dutta, Atanu

doi:10.1002/pssa.2211360134

Cited by 12 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus the junction was found to be rectifying and the turn-on voltage is about 1.5 V. The maximum forward-to-reverse current ratio was found to be about 15. This is on the lower side of that normally reported 6,19 . While Basu et al 6 have reported a forward to reverse current ratio of 80 at 1 V; Ajimsha et al 19 reported a value of 1000 at 5 V for n-ZnO/p-Si heterojunctions.…”

Section: I-v Characteristicsmentioning

confidence: 50%

“…This is on the lower side of that normally reported 6,19 . While Basu et al 6 have reported a forward to reverse current ratio of 80 at 1 V; Ajimsha et al 19 reported a value of 1000 at 5 V for n-ZnO/p-Si heterojunctions. Basu et al 6 deposited ZnO films on p-Si substrate by chemical vapor deposition (CVD) technique and Ajimsha et al 19 prepared ZnO films by pulsed LASER deposition technique.…”

Section: I-v Characteristicsmentioning

confidence: 50%

“…While Basu et al 6 have reported a forward to reverse current ratio of 80 at 1 V; Ajimsha et al 19 reported a value of 1000 at 5 V for n-ZnO/p-Si heterojunctions. Basu et al 6 deposited ZnO films on p-Si substrate by chemical vapor deposition (CVD) technique and Ajimsha et al 19 prepared ZnO films by pulsed LASER deposition technique. Mridha et al 5 reported an extremely high value of forward to reverse current ratio of 5700 at 5 V for sol-gel fabricated films on p-Si.…”

Section: I-v Characteristicsmentioning

confidence: 98%

“…Thus efforts have been mostly directed to grow n-ZnO thin films on p-Si substrate. Heterojunction of n-ZnO/p-Si have potential applications in the visible and ultraviolet photodiodes, gas sensors among many others [4][5][6] . Fast switching of n-ZnO/p-Si diode without any reverse recovery delay has been reported by Choi et al 1 .…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

2012

View full text Add to dashboard Cite

Zinc oxide (ZnO) thin films were deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M) of zincate bath and fixed pH (11.00-11.10). Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM) reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains) on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag) on ZnO and Aluminum (Al) on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.

show abstract

Section: I-v Characteristicsmentioning

confidence: 50%

Section: I-v Characteristicsmentioning

confidence: 50%

Section: I-v Characteristicsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

2012

View full text Add to dashboard Cite

show abstract

“…Wu and Tseng [26] studied the influence of different diameters and densities of the nc-Au on the photocatalytic activity in Au/ZnO nanorod composites. Recently, Basu et al [27] reported on lowering the sensing temperature further to *100°C with surface modified (by Pd nanoparticles dispersion) ZnO thin films deposited by electrochemical process. But the limitation of this process is its incompatibility to standard CMOS process technology.…”

Section: Introductionmentioning

confidence: 99%

Investigation of nanostructured Pd–Ag/n-ZnO thin film based Schottky junction for methane sensing

2016

View full text Add to dashboard Cite

Undoped nanocrystalline n-type ZnO thin film was deposited by chemical deposition technique on a thermally oxidized p-Si (*5 X cm resistivity and \100[ orientation) substrate. Formation of stable zinc oxide thin film was confirmed by two-dimensional X-Ray Diffraction (XRD) and EDX analysis. The average crystallite size of the ZnO sample was evaluated as *50 nm. The surface was characterized by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) that confirm the formation of nanocrystalline (grain size *50 nm) ZnO thin film with surface roughness of *100 nm. Good conversion of precursor into ZnO thin film in the chemical deposition method was evident by Fourier Transform Infrared Spectroscopy (FTIR). A small peak at 479 cm-1 was observed in the FTIR spectrum confirming the formation of quartzite structure of the ZnO. The band gap (*3.44 eV) of the material was calculated from the optical absorption spectroscopy. To prepare Pd-Ag/n-ZnO Schottky junction, Pd-Ag contacts were taken by electron beam evaporation method. I-V characteristics of the junction were studied at different temperatures in inert and reducing ambient (N 2 and N 2 ? CH 4) with turn on voltage of around 0.2 V. The parameters like ideality factor (g), saturation current (I 0), series resistance (Rs), and barrier height (U BO) of the junction were calculated in the temperature range 50-200°C in N 2 as well as in 1 % CH 4 ? N 2 ambient. It was observed that the ideality factor decreases in the temperature range 50-200°C (g = 12.34 at 50°C and g = 1.52 at 200°C) in N 2 ambient and g = 1.18 in N 2 ?CH 4 ambient at 200°C. Schottky Barrier Height (U BO) of the Pd-Ag/n-ZnO junction was found to increase with temperature. A close observation of Pd-Ag/ n-ZnO junction in the presence of methane was performed to appreciate its application as methane sensor. The sensing mechanism was illustrated by a simplified energy band diagram.

show abstract