“…The behavior of S against chemical potential at various temperatures is shown in Figure 5a,b for PdO 2 and PtO 2 monolayers, respectively. Surprisingly, the n (p)-type doping possesses high absolute value of S up to 2269 (2196) and 2734 (2684) μVK −1 for PdO 2 and PtO 2 monolayers at carrier concentration of 1.12 × 10 13 cm −2 and 2.33 × 10, [11] respectively, at 300 K. These values are much higher than monolayers SnP 3 (907 μVK −1 ), [39] SnSe (2160 μVK −1 ), [40] Pd 2 Se 3 (512 μVK −1 ), [41] and TMOs (CrO 2 , MoO 2 , WO 2 , ZrO 2 , HfO 2 ). [16] The quantum confinement effect, which causes steep peaks in the DOS with large slopes (high dn (𝜀)∕d𝜀) close to Fermi level, is responsible for the high values of S. [42] The large value of effective mass of carriers also gives an extra pump to S. The steep peaks of DOS near conduction band maxima as compared to valence band minima are what causes the higher values of S for electron doping in comparison to hole doping for both monolayers.…”