2019
DOI: 10.1007/978-3-030-06155-5_12
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Study and Development of the Precision Management System for Livestock

Abstract: The article studies the precision management for livestock including breeding, feeding, disease preventing, safety supervision and environmental monitoring. The system based on the wireless mode is developed to monitoring the whole production procedure of livestock. It comprises breeding management, automatic feeding formulation, disease diagnose and prevention, production safety supervision and environmental monitoring subsystems. The study greatly promotes the efficiency of intensive cultivation. Through the… Show more

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Cited by 1 publication
(2 citation statements)
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“…The behavior of S against chemical potential at various temperatures is shown in Figure 5a,b for PdO 2 and PtO 2 monolayers, respectively. Surprisingly, the n (p)-type doping possesses high absolute value of S up to 2269 (2196) and 2734 (2684) μVK −1 for PdO 2 and PtO 2 monolayers at carrier concentration of 1.12 × 10 13 cm −2 and 2.33 × 10, [11] respectively, at 300 K. These values are much higher than monolayers SnP 3 (907 μVK −1 ), [39] SnSe (2160 μVK −1 ), [40] Pd 2 Se 3 (512 μVK −1 ), [41] and TMOs (CrO 2 , MoO 2 , WO 2 , ZrO 2 , HfO 2 ). [16] The quantum confinement effect, which causes steep peaks in the DOS with large slopes (high dn (𝜀)∕d𝜀) close to Fermi level, is responsible for the high values of S. [42] The large value of effective mass of carriers also gives an extra pump to S. The steep peaks of DOS near conduction band maxima as compared to valence band minima are what causes the higher values of S for electron doping in comparison to hole doping for both monolayers.…”
Section: Transport Propertiesmentioning
confidence: 98%
See 1 more Smart Citation
“…The behavior of S against chemical potential at various temperatures is shown in Figure 5a,b for PdO 2 and PtO 2 monolayers, respectively. Surprisingly, the n (p)-type doping possesses high absolute value of S up to 2269 (2196) and 2734 (2684) μVK −1 for PdO 2 and PtO 2 monolayers at carrier concentration of 1.12 × 10 13 cm −2 and 2.33 × 10, [11] respectively, at 300 K. These values are much higher than monolayers SnP 3 (907 μVK −1 ), [39] SnSe (2160 μVK −1 ), [40] Pd 2 Se 3 (512 μVK −1 ), [41] and TMOs (CrO 2 , MoO 2 , WO 2 , ZrO 2 , HfO 2 ). [16] The quantum confinement effect, which causes steep peaks in the DOS with large slopes (high dn (𝜀)∕d𝜀) close to Fermi level, is responsible for the high values of S. [42] The large value of effective mass of carriers also gives an extra pump to S. The steep peaks of DOS near conduction band maxima as compared to valence band minima are what causes the higher values of S for electron doping in comparison to hole doping for both monolayers.…”
Section: Transport Propertiesmentioning
confidence: 98%
“…[10] Low dimensionality triggers an immense density of interface where over a wide mean free path range, phonons can be scattered more intensely than electrons, which leads to decrement of (𝜅 l ) while conserving electrical conduction. [11] Compared to their bulk counterparts, atomically thin transition metal oxides (TMOs) are renowned for their outstanding characteristics. These 2D materials may exist as single planer structure or multilayer of individual TMOs.…”
Section: Introductionmentioning
confidence: 99%