Study and formation of 2D microstructures of sapphire by focused ion beam milling

Taguchi, Dai; Kang, Xiaoning; Bei, Zhang; Xu, Jun; Bao, Kui; Xiong, Chao; Gan, Zizhao

doi:10.1016/j.mee.2007.11.009

Cited by 20 publications

(12 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A). This is in qualitative agreement with experimental (Tseng, ; Dai et al , ) and theoretical (Behrisch, '81; Tseng, ) findings. A similar analysis of the transmission‐milled side yields a dependence that fits well with the square of the ion dose instead (Fig.…”

Section: Resultssupporting

confidence: 91%

Direct and Transmission Milling of Suspended Silicon Nitride Membranes With a Focused Helium Ion Beam

2012

View full text Add to dashboard Cite

Helium ion milling of suspended silicon nitride thin films is explored. Milled squares patterned by scanning helium ion microscope are subsequently investigated by atomic force microscopy and the relation between ion dose and milling depth is measured for both the direct (side of ion incidence) and transmission (side opposite to ion incidence) regimes. We find that direct-milling depth varies linearly with beam dose while transmission-milling depth varies with the square of the beam dose, resulting in a straightforward method of controlling local film thickness.

show abstract

Section: Resultssupporting

confidence: 91%

Direct and Transmission Milling of Suspended Silicon Nitride Membranes With a Focused Helium Ion Beam

2012

View full text Add to dashboard Cite

show abstract

“…This natural lithography approach using ordered SiO 2 nanospheres as mask material is superior for large area, volume processes as it is very simple and fast compared to other methods such as imprinting, electron-beam lithography, focused-ion beam pattering and conventional photolithography [20][21][22]. Furthermore, this approach is highly reproducible, particularly compared to a photo-electro-chemical wet etch process based on a KOH solution.…”

Section: Resultsmentioning

confidence: 99%

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Kim¹,

Mastro²,

Jung³

et al. 2008

Thin Solid Films

View full text Add to dashboard Cite

The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO 2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO 2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl 3 and Cl 2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO 2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

show abstract

“…Moreover, FIB milling technique is a micro-and nanofabrication process which can mill any kind of materials like metallic, nonmetallic, biological samples, magnetic material, etc. [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Machinability Study of Cemented Carbide Using Focused Ion Beam (FIB) Milling

Bhavsar

Aravindan

Rao

2012

Materials and Manufacturing Processes

View full text Add to dashboard Cite

Focused ion beam (FIB) milling is one of the fastest and accurate processes for the micro-and nanofabrication of devices. There is a need of making micro-and nanoscale components from cemented carbide material due to its favorable properties of high hot hardness and wear resistance. These are the required properties of a microtool during micromachining. Efforts have been put forward to investigate the machinability aspects of cemented carbide by the FIB milling process. Beam current was observed as the significant process parameters of FIB milling process to affect the material removal rate (MRR) and surface roughness on the machined surface of cemented carbide. In addition, extraction voltage, angle of beam incidence, and percentage overlap between beam diameters of adjacent pixels were taken into account to analyze the machinability aspects of cemented carbide by FIB milling. Dwell time was observed as a less significant parameter to affect MRR and surface roughness of cemented carbide.

show abstract

Study and formation of 2D microstructures of sapphire by focused ion beam milling

Cited by 20 publications

References 23 publications

Direct and Transmission Milling of Suspended Silicon Nitride Membranes With a Focused Helium Ion Beam

Direct and Transmission Milling of Suspended Silicon Nitride Membranes With a Focused Helium Ion Beam

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Machinability Study of Cemented Carbide Using Focused Ion Beam (FIB) Milling

Contact Info

Product

Resources

About