Study by EELS and EPES of the stability of InPO4/InP system

Ouerdane, A.; Bouslama, M.; Ghaffour, M.; Abdellaoui, Abdelkader; Hamaida, K.; Lounis, Zoubida; Monteil, Y.; Berrouachedi, N.; Ouhaibi, A.

doi:10.1016/j.apsusc.2008.05.345

Cited by 10 publications

(5 citation statements)

References 27 publications

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“…Here, we present the variation of the ground state energy of SQW with top barrier layer thickness and measure DE v using PL and UPS techniques. Further, it is of necessary interest to investigate the chemical nature of oxides present on the top surface of InAs x P 1À x /InP SQW and their effect on the valence band offset under such conditions [8].…”

Section: Introductionmentioning

confidence: 99%

Band alignment and quantum states of InAs P1−/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

et al. 2012

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Section: Introductionmentioning

confidence: 99%

Band alignment and quantum states of InAs P1−/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

et al. 2012

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“…According to the pH ranges, two different chemical compositions of InP surface were indeed determined by XPS chemical analyses. Either in acidic pH range [0-4] or basic pH range [8][9][10][11][12][13][14] a chemical composition close to a bare InP surface was determined, while a presence of an oxide/hydroxide mixture was analyzed only in neutral pH range (4,5). Our previous work in liquid ammonia (NH 3 liq.)…”

Section: Introductionmentioning

confidence: 99%

Effect of a Thin Film of Polypolyphosphazene on the pH Response of InP

Meledje

Gonçalves

Simon³

et al. 2017

ECS Trans.

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This paper describes how the flat band potential of n-InP changes against the pH in aqueous media. This study involves two controlled processes that cause a reproducible surface chemistry on InP, a fact also confirmed by XPS analyses. The monitoring processes provide a surface freshly deoxidized and a surface entirely recovered by a thin film of polypolyphosphazene. A nerstian variation of the pH is observed on both surfaces. The slopes of both straight lines are kept constant versus the pH. However an overvoltage around 400 mV is detected between the two straight lines. The doping level obtained from both slopes is consistent with the undopped semiconductor. Despite the total covering of the surface by a thin film of polypolyphosphazene, an interfacial acid-base equilibrium can take place through the polyphosphazene film and the solvent.

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“…To further elucidate other chemical reactions of the intercalated fragments of P 2 O 5 that could take place at graphene-substrate heterointerfaces, we show that this process can also be used to form confined metal phosphates by intercalating P 2 O 5 into a graphene-substrate heterointerface initially containing 2D metals to form indium phosphate as the example in this study (see Methods). Indium phosphate, specifically InPO 4 , is a wide bandgap insulator ( E g = 4.5 eV) with excellent dielectric properties that initially gain interest as a gate material for InP formed via surface oxidation. − However, the formation of dimensionally confined indium phosphates remains largely unexplored, thus impending a more comprehensive understanding of their physical properties and potential applications. In our case, we demonstrated the successful formation of confined indium phosphates by intercalating P 2 O 5 into a graphene-SiC heterointerface initially containing confined mono- to bilayer indium also formed by intercalation. , We identified the composition of the confined indium phosphate at the heterointerface by investigating the In and P core-levels using high-resolution XPS (Figure a,b, respectively).…”

Section: Resultsmentioning

confidence: 99%

Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene-Substrate Heterointerfaces

Liang,

Ma,

Zhao

et al. 2023

ACS Appl. Mater. Interfaces

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Intercalation is the process of inserting chemical species into the heterointerfaces of two-dimensional (2D) layered materials. While much research has focused on the intercalation of metals and small gas molecules into graphene, the intercalation of larger molecules through the basal plane of graphene remains challenging. In this work, we present a new mechanism for intercalating large molecules through monolayer graphene to form confined oxide materials at the graphene-substrate heterointerface. We investigate the intercalation of phosphorus pentoxide (P2O5) molecules directly from the vapor phase and confirm the formation of confined P2O5 at the graphene-substrate heterointerface using various techniques. Density functional theory (DFT) corroborates the experimental results and reveals the intercalation mechanism, whereby P2O5 dissociates into small fragments catalyzed by defects in the graphene that then permeates through lattice defects and reacts at the heterointerface to form P2O5. This process can also be used to form new confined metal phosphates (e.g., 2D InPO4). While the focus of this study is on P2O5 intercalation, the possibility of intercalation from predissociated molecules catalyzed by defects in graphene may exist for other types of molecules as well. This in-depth study advances our understanding of intercalation routes of large molecules via the basal plane of graphene as well as heterointerface chemical reactions leading to the formation of distinctive confined complex oxide compounds.

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Study by EELS and EPES of the stability of InPO4/InP system

Cited by 10 publications

References 27 publications

Band alignment and quantum states of InAs P1−/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

Band alignment and quantum states of InAs P1−/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

Effect of a Thin Film of Polypolyphosphazene on the pH Response of InP

Elucidating the Mechanism of Large Phosphate Molecule Intercalation Through Graphene-Substrate Heterointerfaces

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