Band alignment and quantum states of InAs P1−/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

Dixit, V. K.; Kumar, Shailendra; Singh, S. D.; Porwal, S.; Sharma, T. K.; Oak, S. M.

doi:10.1016/j.matlet.2012.07.069

Cited by 6 publications

(4 citation statements)

References 18 publications

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“…The VBM for bulk i-GaAs is estimated to be 0.75 eV from the Fermi edge, which is indicative of slightly n-type characteristics. At the same time, i-InGaP shows the VBM at 3.4 eV from the Fermi level, which shows at least partial oxidation of the i-InGaP surface soon after it is taken out of the MOCVD reactor, and is consistent with previously reported results . The oxidation of i-InGaP is also evident from the core-level XPS spectra of P 2p (see Figure S2), where a satellite peak at 132 eV confirms the PO x bond.…”

Section: Resultssupporting

confidence: 90%

“…At the same time, i-InGaP shows the VBM at 3.4 eV from the Fermi level, which shows at least partial oxidation of the i-InGaP surface soon after it is taken out of the MOCVD reactor, and is consistent with previously reported results. 19 The oxidation of i-InGaP is also evident from the core-level XPS spectra of P 2p (see Figure S2), where a satellite peak at 132 eV confirms the PO x bond. The VBMs for ITO and ZnO are measured at 3.1 and 3.0 eV, respectively, from the Fermi level.…”

Section: Resultsmentioning

confidence: 94%

“…21 Finally, we assume that both ZnO and InGaP(O) have the same band gap of 3.3 eV. Given that the band gap for both ZnO and InGaP(O) has been reported to be 3.3 eV 19 and because there is no defined boundary between InGaP and ZnO, it is a valid assumption. As expected, the calculated band diagram depicted in Figure 4e shows the formation of a heavily doped n-type ZnO/i− InGaP(O) interface, which forces band bending in i-GaAs, leading to the accumulation of electrons at the interface.…”

Section: Resultsmentioning

confidence: 99%

“…Finally, we assume that both ZnO and InGaP(O) have the same band gap of 3.3 eV. Given that the band gap for both ZnO and InGaP(O) has been reported to be 3.3 eV and because there is no defined boundary between InGaP and ZnO, it is a valid assumption.…”

Section: Resultsmentioning

confidence: 99%

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Electron-Selective Contact for GaAs Solar Cells

Raj

Haggrén

Tournet

et al. 2021

ACS Appl. Energy Mater.

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In recent years, carrier-selective contacts have emerged as an efficient alternative to the conventional doped p–n or p–i–n homojunction for charge carrier separation in high-performance solar cells. However, so far, there has been no development in carrier-selective contacts for GaAs solar cells. This paper proposes an alternative device structure and reports an 18.5% efficient single-junction GaAs solar cell using zinc oxide (ZnO) as an electron-selective contact. A detailed X-ray and ultraviolet photoelectron spectroscopy depth profile analysis is performed to reveal the mechanism of carrier selectivity and improved efficiency compared to homojunction cells grown under similar conditions. Moreover, a detailed loss analysis shows that the fabricated solar cell has the potential to reach more than 25% efficiency with further optimization. The device structure proposed in this paper will provide a route to reduce the complexity and cost of epitaxially grown cells while also allowing for the possibility to fabricate high-efficiency III–V solar cells using low-cost growth techniques (such as closed-space vapor transport and thin-film vapor–liquid–solid) where doping can be extremely challenging.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Electron-Selective Contact for GaAs Solar Cells

Raj

Haggrén

Tournet

et al. 2021

ACS Appl. Energy Mater.

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A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

et al. 2022

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Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors

Vashisht

Dixit

Porwal

et al. 2016

Journal of Applied Physics

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The effect of charge carrier localization resulting in “S-shaped” temperature dependence of the photoluminescence peak energy of InAsxP1−x/InP quantum wells (QWs) is distinctly revealed by the temperature dependent surface photo voltage (SPV) and photoconductivity (PC) processes. It is observed that the escape efficiency of carriers from QWs depends on the localization energy, where the carriers are unable to contribute in SPV/PC signal below a critical temperature. Below the critical temperature, carriers are strongly trapped in the localized states and are therefore unable to escape from the QW. Further, the critical temperature increases with the magnitude of localization energy of carriers. Carrier localization thus plays a pivotal role in defining the operating temperature range of InAsxP1−x/InP QW detectors.

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Band alignment and quantum states of InAs P1−/InP surface quantum wells investigated from ultraviolet photoelectron spectroscopy and photoluminescence

Cited by 6 publications

References 18 publications

Electron-Selective Contact for GaAs Solar Cells

Electron-Selective Contact for GaAs Solar Cells

A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors

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