Study of anharmonicity in pure and doped InSe by Raman scattering

Zolfaghari, Mahmoud

doi:10.1142/s021797921850340x

Cited by 2 publications

(2 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, as the temperature decreases, a distinguished peak appears at 209 cm −1 , which is assigned as the polar mode E(LO). [34][35][36] This phenomenon may arise from the dominant intraband Fröhlich electron-phonon interactions, which originate from the scattering of electrons or holes within the same band by the macroscopic electric field of a LO phonon [37]. Furthermore, with increasing temperature, an increase in the FWHM of the peak is observed for the InSe nanosheet as shown in figure 1(e).…”

Section: Resultsmentioning

confidence: 94%

Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Chen¹,

Cui²,

Wang³

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

Understanding how temperature affects the structural and electronic properties for two-dimensional (2D) semiconductors could promote the application and development of nanoelectronic devices. Here, the temperature dependence of lattice structure for indium selenide (InSe) nanosheets and the corresponding electronic properties of 3 nm indium-deposited InSe field-effect transistors (FETs) are systematically demonstrated. Analyses of Raman spectra suggest that the difference of phonon frequency (∆ω) for the A 2 1g mode is found to be 3.14 cm −1 , which is larger than that of the E 1 2g mode due to the stronger electron-phonon coupling for the A 2 1g mode. The device performance based on indium-deposited InSe is systematically explained using Kelvin probe force microscopy (KPFM) and the predicted energy band structure. Furthermore, FETs based on temperature and variable thickness InSe flakes are designed as applicable devices. Our findings are of fundamental importance to explain the underlying physics in intrinsic InSe transistors and improve further applications.

show abstract

Section: Resultsmentioning

confidence: 94%

Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Chen¹,

Cui²,

Wang³

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…In particular, it exhibits outstanding performance regardless of whether it uses ultra-high mobility FETs (Jiang et al, 2019) or photodiodes with high responsivity to photocurrent generation (Buscema et al, 2015). Recently, due to the unique anharmonic lattice dynamics of InSe, the feasibility of application in heat conduction has been studied (Zeng et al, 2020) (Zolfaghari, 2018).…”

Section: Introductionmentioning

confidence: 99%

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Hsiao

Yang²,

Yang³

et al. 2022

Front. Mater.

View full text Add to dashboard Cite

A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in electronics and optoelectronics. However, the single phase of InSe is still a challenge due to the close formation energy of InSe and In2Se3. In this study, we demonstrate a novel growth method for 2D InSe with an indium precursor layer by molecular beam epitaxy. Indium pre-deposited on substrate at room temperature followed by growth of InSe at 550°C can overcome the problem of stoichiometry control and can be applied on amorphous substrate with high quality. According to Raman scattering spectra, X-ray diffraction, and high-resolution transmission electron microscopy results, we find that 2D InSe phase can be facile formed under both indium-rich and -poor conditions. The pre-deposited indium precursor effectively induces replacement with subsequent Se and In atoms to form the InSe phase while suppressing the In2Se3 phase. Additionally, this single phase InSe is stable in the atmosphere, exhibiting superior electronic properties even after over 100 days exposure. Recently, this method has been successfully applied to a flexible substrate, such as aluminum foil, resulting in reliable InSe quality. Our results demonstrate an innovative and forward-looking approach to developing 2D InSe material.

show abstract

Study of anharmonicity in pure and doped InSe by Raman scattering

Cited by 2 publications

References 48 publications

Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Contact Info

Product

Resources

About