2021
DOI: 10.1016/j.ceramint.2021.02.056
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Study of anodic oxide films formed on solid-state sintered SiC-ceramic at high anodic potentials

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Cited by 8 publications
(1 citation statement)
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“…On the other hand, peaks of both the oxides SiO 2 and SiO x C y appear in all three regions. The nonstoichiometric silicon oxy-carbide (SiO x C y ), with a binding energy peak located at 102.8 eV in the Si 2p spectrum and 284.4 eV in the C 1 s spectrum, indicates an intermediate oxide before forming SiO 2 [32,33]. Combined with the EDS spectra, we conclude that the unmachined surface remains in a complete oxidation state, which is hardly affected by the plasma.…”
Section: Characteristics Of Materials Removal and Surface Chemistrymentioning
confidence: 80%
“…On the other hand, peaks of both the oxides SiO 2 and SiO x C y appear in all three regions. The nonstoichiometric silicon oxy-carbide (SiO x C y ), with a binding energy peak located at 102.8 eV in the Si 2p spectrum and 284.4 eV in the C 1 s spectrum, indicates an intermediate oxide before forming SiO 2 [32,33]. Combined with the EDS spectra, we conclude that the unmachined surface remains in a complete oxidation state, which is hardly affected by the plasma.…”
Section: Characteristics Of Materials Removal and Surface Chemistrymentioning
confidence: 80%