Study of as deposited metal contacts for n‐SiC

Abstract

We have investigated the influence of different metals on the contact behaviour to n-SiC. To avoid the incorporation of heat into the structures, during the formation of the contact, we have tried to find metals that form ohmic contacts even without alloying. The results show that this is possible, but strongly dependent on the resistance of the n-SiC. We have investigated the contacts with X-ray diffraction (XRD) to examine the formation of the ohmic behaviour. Additional experiments on device structures were also performed to get a feeling of the contact formation on GaN respectively AlGaN based devices.