Study of basic mechanisms of single event upset in low-capacitance Si and GaAs diodes using high-energy microbeams

Nishijima, Takashi; Sekiguchi, Hiroyuki; Matsuda, Sumio; Takeuchi, M.; Shiono, Noboru; Anayama, H.; Mirio, A.

doi:10.1016/0168-583x(95)00465-3

Cited by 5 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gallium Arsenide Schottky diodes were among the very �rst semiconductor devices analysed by IBIC to improve their resistance against single event upsets [102,103]. erefore, a systematic IBIC analysis was carried out on Schottky diodes fabricated on semi-insulating GaAs substrates in order to correlate the CCE uniformity with the energy resolution of the device [104].…”

Section: Other Wide Bandgap Semiconductorsmentioning

confidence: 99%

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Vittone

2013

ISRN Materials Science

View full text Add to dashboard Cite

e ion beam induced charge (IBIC) technique is a scanning microscopy technique which uses �nely focused MeV ion beams as probes to measure and image the transport properties of semiconductor materials and devices. Its success stems from the combination of three main factors: the �rst is strictly technical and lies in the availability of laboratories and expertise around the world to provide scanning MeV ion beams focused down to submicrometer spots. e second reason stems from the peculiarity of MeV ion interaction with matter, due to the ability to penetrate tens of micrometers with reduced scattering and to excite a high number of free carriers to produce a measurable charge pulse from each incident ion. Last, but not least, is the availability of a robust theoretical model able to extract from the measurements all the parameters for an exhaustive characterization of the semiconductor. is paper is focused on these two latter issues, which are examined by reviewing the current status of IBIC by a comprehensive survey of the theoretical model and remarkable examples of IBIC applications and of ancillary techniques to the study of advanced semiconductor materials and devices.

show abstract

Section: Other Wide Bandgap Semiconductorsmentioning

confidence: 99%