Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy

Abstract

Estimation of unknown autocomelation coefficients. P. P. Stone (Department of Mechanical Engineering, University of Surrey, Guildford GU2 SXH, England. Physica Scripta (Sweden) 19, 402-410,1919. Certain methods for obtaining autocorrelation coefficients lead to a part knowledge of the total function. The problem discussed in this paper considers the situation where the zero lag coefficient is known, then there are a number of unknown coefficients, followed by knowledge of the remaining part of the function. This particular problem is sometimes encountered when data is randomly or sequentially sampled and there exists a restriction on the sample time.It is intended to propose a method for estimating these unknown lag values based on the properties of the autocorrelation matrix.

Observation of electric potential in organic thin-film transistor by bias-applied hard X-ray photoemission spectroscopy

“…3(a), a Si 1s peak from SiO 2 underneath the PEN film was clearly observed at around 6094.6 eV by applying V g = 0 V, which corresponds to Si 4+ of SiO 2 . 34) The results indicate that we could detect C 1s photoelectrons in all regions of the PEN film from top to bottom. Although weak peaks were observed at around 6101 eV (marked by+) by applying a negative gate voltage, we could not ascertain the origins of the peaks in this experiment.…”

Effects of applying bias voltage on metal-coated pentacene films on SiO2 studied by hard X-ray photoelectron spectroscopy

“…It can be concluded that the peaks at around 6095 eV correspond to Si 4+ of SiO 2 . [32][33][34] Two peaks were also observed in the Si 1s spectra of the pentacene films on SiO 2 (no metal layer), as shown in Fig. 3.…”

“…Thus, the Si 1s HAXPES spectra suggest that Si atoms of SiO 2 might be partially reduced to Si 2+ or Si 3+ at the interface to pentacene films. [32][33][34] There was no effect of the voltage application on the Si 1s spectra of 30°TOA, except for shifts in kinetic energies. The kinetic energies of the two Si 1s peaks also linearly shifted in accordance with applied voltage, as well as with the Au 4f spectra.…”

Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition

“…Here, the peak at approximately 1839 eV is assigned to Si-Si bonds and the peak at approximately 1843 eV is assigned to Si-O bonds (SiO 2 , Si 2 O 3 and so on). [16][17][18] The spectra are normalized by the Si-Si bond intensity. In both samples, the SiO x peaks are observed.…”