Study of Co silicide formation by multiple implantation

Witzmann, A.; Schippel, S.; Zentgraf, A.; Gajduk, P.I.

doi:10.1063/1.354013

Cited by 11 publications

(6 citation statements)

References 26 publications

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“…After annealing for 1 min (Fig. 1a), even at a lower Co dose than in earlier studies (19,20), the Co profile narrows to a width of about 110 nm and increases in height by a factor of about 1.9 as compared to the as-implanted profile. In addition to this narrowing, the peak height position shifts about 100 nm towards the bulk, and a secondary "peak," or shoulder, forms near the surface at a depth of about 100 nm.…”

Section: [Traduit Par La Rédaction] Carlow and Zinke-allmang 1745mentioning

confidence: 63%

“…A few experimental studies of the film formation stages of mesotaxy have been carried out by Co implantation to less than the critical dose (4,(18)(19)(20), where precipitate-precipitate distances remain sufficiently large so coalescence and percolation of precipitates do not dominate. At 10% of the critical dose (i.e., 1.8% Co peak concentration), collapse of the Co profile still occurs leading to isolated CoSi 2 precipitates.…”

Section: [Traduit Par La Rédaction] Carlow and Zinke-allmang 1745mentioning

confidence: 99%

“…The shifting of the main peak has not been reported for substrates implanted to the critical dose. In experiments where damage is intentionally introduced within the Co implant profile (by following the Co implant with lowtemperature Si implantation) the collapse of the Co profile is centered around the damaged region (19). In has been suggested that the gettering of Co by defects is responsible for the shift of the peak towards the bulk where the end-ofrange (EOR) damage caused by implantation is located.…”

Section: [Traduit Par La Rédaction] Carlow and Zinke-allmang 1745mentioning

confidence: 99%

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Article

Carlow¹,

Zinke-Allmang²

1998

Can. J. Chem.

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We present results on the formation of buried silicide layers at ion implantation doses in the range of 1-60% of the critical dose for formation of a uniform layer. We emphasize observations for the low-dose range of 1-5% where the precipitate density is quite dilute. The Co redistribution during post-implant annealing is measured using Rutherford backscattering techniques and secondary ion mass spectrometry. Experimental observations during postimplantation annealing at 1000°C involves (i) a contraction of the Co depth profile for all doses, (ii) shifting of the peak of the profile towards the bulk, and (iii) formation of a secondary Co peak near the surface. The secondary peak is only present in samples implanted to greater than 3% of the critical dose. The interpretation of the shift of the main peak and the occurrence of the secondary peak requires a model exceeding the standard ripening model used previously to describe mesotaxy. We suggest that more recent ripening-based concepts allow for a full description of these observations with a minimum of parameters, particularly not requiring interaction with the complex defect profiles formed initially during implantation. Essential for this model is a proper inclusion of precipitate-precipitate interactions and the role of diffusion screening.Résumé : On a examiné l'effet, sur la formation de couche uniforme, de la formation de couches de siliciure enfouies à des implantations ioniques allant de 1 à 60% de la dose critique. On a particulièrement examiné les effets aux faibles doses allant de 1 à 5% alors que la densité du précipité est relativement diluée. On a utilisé la spectrométrie de masse des ions secondaires et des techniques de rétrodiffraction de Rutherford pour mesurer la redistribution du Co au cours de la recuisson suivant l'implantation. Les observations expérimentales faites au cours de la recuisson à 1000°C suivant l'implantation mettent en évidence: (i) une contraction du pic de profondeur du Co pour toutes les doses; (ii) un déplacement du maximum du profil vers la masse et (iii) la formation d'un pic secondaire près de la surface. Le pic secondaire n'est présent que dans les échantillons pour lesquels l'implantation est supérieure à 3% de la dose critique. L'interprétation du déplacement du pic principal et de la présence du pic secondaire nécessite l'utilisation d'un modèle plus important que le modèle de maturation utilisé antérieurement pour décrire la mésotaxie. On suggère l'utilisation du modèle de maturation proposé plus récemment qui est basé sur des concepts qui permettent une description complète de ces observations avec un minimum de paramètres qui ne nécessitent en particulier pas d'interaction avec les profils de défaut du complexe qui se forme initialement au cours de l'implantation. Pour ce modèle, il est essentiel d'inclure des interactions précipité-précipité correctes ainsi que le rôle d'effet d'écran de la diffusion.

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Section: [Traduit Par La Rédaction] Carlow and Zinke-allmang 1745mentioning

confidence: 63%

Section: [Traduit Par La Rédaction] Carlow and Zinke-allmang 1745mentioning

confidence: 99%

Section: [Traduit Par La Rédaction] Carlow and Zinke-allmang 1745mentioning

confidence: 99%

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Article

Carlow¹,

Zinke-Allmang²

1998

Can. J. Chem.

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“…For Co implantation to 10% of the critical concentration ͑i.e., 1.8% Co peak concentration͒, the Co redistribution during postimplant annealing differs from implants near the critical concentration: the position of the peak Co concentration shifts to greater depths. [5][6][7] This has been attributed to enhanced nucleation of CoSi 2 precipitates in the end-of-range damage region created by implantation. 6,7 Further, it has been shown 6 that selectively damaging regions in the Co profile, by following the Co implant with a low-temperature, low-dose Si implant, causes preferential nucleation of CoSi 2 precipitates in the damaged region during postimplant annealing.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7] This has been attributed to enhanced nucleation of CoSi 2 precipitates in the end-of-range damage region created by implantation. 6,7 Further, it has been shown 6 that selectively damaging regions in the Co profile, by following the Co implant with a low-temperature, low-dose Si implant, causes preferential nucleation of CoSi 2 precipitates in the damaged region during postimplant annealing. Therefore, defects and defect annealing play an important, and possibly dominant, role in the Co redistribution in low-dose implantations.…”

Section: Introductionmentioning

confidence: 99%

Defect evolution in Co-implanted Si during annealing at 1000 °C studied using variable-energy positrons and Rutherford backscattering

et al. 1996

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Variable-energy positron-annihilation spectroscopy ͑PAS͒ and Rutherford backscattering channeling ͑RBSC͒ have been used to probe damage induced by the implantation of n-type CzSi with Co ϩ ions at 375°C to fluences ranging from 2ϫ10 14 to 1ϫ10 16 cm Ϫ2 . For fluences of 2ϫ10 14 and 1ϫ10 15 cm Ϫ2 only one type of defect was detected using the positron technique, distributed evenly to a depth of 1 m, ϳ2.5 times that of the implanted ions. For fluences between 4ϫ10 15 and 1ϫ10 16 cm Ϫ2 a second defect type was observed, to a depth equal to the range of the implanted ions. These defects have been tentatively identified as vacancy-impurity complexes and vacancy clusters, respectively. No defects were detected using Rutherford backscattering channeling for the samples irradiated to fluences of 2ϫ10 14 and 1ϫ10 15 cm Ϫ2 ; however, defects were observed for the higher fluences. Upon annealing of the samples irradiated to these higher fluences at 1000°C for 1 min, large cavities ͑Ͼ1 nm͒ were detected using PAS. This is consistent with the dissolution of silicide precipitates previously observed using TEM. It is suggested that the formation of the cavities is dependent on the presence of vacancy clusters following the ion implantation. The evolution of the cavities at 1000°C was observed for longer annealing times. An increase in the number of extended defects was observed using RBSC following annealing to 1000°C. ͓S0163-1829͑96͒04640-1͔

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