A brief review is given of recent positron studies of metal and semiconductor nanocrystals. The prospects offered by positron annihilation as a sensitive method to access nanocrystal (NC) properties are described and compared with other experimental methods. The tunability of the electronic structure of nanocrystals underlies their great potential for application in many areas. Owing to their large surface-to-volume ratio, the surfaces and interfaces of NCs play a crucial role in determining their properties. Here we focus on positron 2D angular correlation of annihilation radiation (2D-ACAR) and (two-detector) Doppler studies for investigating surfaces and electronic properties of CdSe NCs.1 Introduction Nanoscale particles have become extremely important in the tailoring of materials for a wide range of applications [1][2][3]. In particular, semiconductor nanocrystals (NCs) have attracted wide interest because their electronic and optical properties can be tuned by variation of their size and shape [2,3]. At small sizes, the surface or interface energy becomes a very significant factor in establishing not only the interior crystal structure but also the specific surface structure and ad-atom termination of the NCs. These special properties underlie the large potential of NCs for applications in areas of nanostructured thin-film solar cells [4], opto-electronics [3] and spintronics [5], fission/fusion reactor vessel steels [6], metal hydrides for hydrogen storage [7], and fluorescence-based detection of biomolecules [3].During the last decade, it has been shown that positrons (e + ) act as a sensitive, self-seeking probe of embedded and colloidal NCs [8][9][10][11][12][13][14][15][16][17][18][19][20], revealing the local structural properties and electronic structure via a measurement of the electron momentum density [21]. Positron methods are thus capable of extracting valuable information on properties at specific surface, interface or defect sites in the NCs, which are difficult to access by other methods such as transmission electron microscopy, X-ray diffraction (XRD), and EXAFS. Furthermore, insight into the electronic structure of buried or embedded NC systems is gained, which is difficult to obtain with e.g. STM or XPS.