2017
DOI: 10.1088/2053-1591/aa62f0
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Study of Cs/NF3adsorption on GaN (0 0 1) surface

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Cited by 7 publications
(1 citation statement)
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“…GaN semiconductor material has good photoemission performance, low electron affinity, and stable physical and chemical properties. Therefore, GaN nanostructures are widely used in photoemission devices [1][2][3][4][5]. Zhen C et al have synthesized GaN nanopencils and nanotowers and singlecrystalline bamboo shoot-shaped GaN nanowires and a layer-structure GaN nanowires by a chemical vapor deposition (CVD) method.…”
Section: Introductionmentioning
confidence: 99%
“…GaN semiconductor material has good photoemission performance, low electron affinity, and stable physical and chemical properties. Therefore, GaN nanostructures are widely used in photoemission devices [1][2][3][4][5]. Zhen C et al have synthesized GaN nanopencils and nanotowers and singlecrystalline bamboo shoot-shaped GaN nanowires and a layer-structure GaN nanowires by a chemical vapor deposition (CVD) method.…”
Section: Introductionmentioning
confidence: 99%