Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence

Salviati, G.; Zanotti-Fregonara, C.; Borgarino, M.; Lazzarini, L.; Cattani, L.; Cova, Paolo; Mazzer, M.

doi:10.1016/s0026-2714(98)00128-0

Cited by 7 publications

(4 citation statements)

References 21 publications

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“…For physical or technological investigations, scanning electron microscopy (SEM) has been extensively used to describe LED structure obtained after complex destructive chemical preparations 26 . The energy dispersion X-ray technique (EDX) is used in association with SEM testing for chemical analyses of the different materials composing the LED.…”

Section: Technological Description and Electro-optical Characterizationsmentioning

confidence: 99%

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Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Section: Technological Description and Electro-optical Characterizationsmentioning

confidence: 99%

“…This parameter is calculated from the fitting of curves plotted in Figure 7 and taking into account Equation (24). The linear behaviour of τ a versus P 0 is shown in Figure 15 and Equation (26) gives the relation between P 0 and τ a :…”

Section: Reliability Investigations Using Technological Dispersionmentioning

confidence: 99%

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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“…These are typical cases of “small” perturbations affecting Raman and CL band morphology in electronic materials. While writing this paper, the author is aware of several previously published review papers dealing with Raman and CL studies of electronic materials and devices 6–17. The primary objective of those reviews ( i.e ., whose list here is not intended, due to the limited space available, to be an exhaustive one) has been to establish different peculiarities of light emission spectra, to clarify the effect of lattice defects on them, and to relate them to fundamental properties of semiconducting or superconducting states, such as band gap or superconducting gap.…”

Section: Introductionmentioning

confidence: 99%

Spatially resolved Raman and cathodoluminescence probes in electronic materials: Basics and applications

Pezzotti

2010

Physica Status Solidi (a)

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Spatially resolved spectroscopy of both Raman and cathodoluminescence (CL) emissions represent a quite powerful characterization method in electronics. In this paper, the underlying physics that dictates the different characteristics of Raman and CL probes is revisited, deepened, and further interpreted in order to clarify how the different nature of those probes enables one bringing about different sets of complementary information. Furthermore, it is inquired into the causes for which data collected by the two different spectroscopic methods on the same material or device may, at a first glance, appear inconsistent to each other and, for some aspects, contradictory. Such differences and contradictions are then shown to disappear once the different nature of the two probes, especially with respect to their spatial response and morphology, is clarified and properly taken into account. Emphasis is finally placed on quantitatively describing the spatial response of Raman and CL probes and to apply such knowledge to elucidate the behavior of electronic materials. The two types of light emission are described according to a common formalism, which details their respective probe response functions in the three‐dimensional space. Practical applications of Raman and CL spectroscopy to resolve highly graded fields of crystal orientation and elastic stress/strain in paradigm electronic materials are finally shown and compared.

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“…Investigation of the spectral characteristics of emitted CL is of increasing importance, particularly with the current interest in thin films (Zamoryanskaya and Sokolov, 1998;Steinbach et al, 1998), semiconductor construction (Fujita et al, 1996;Salviati et al, 1998), and microcharacterization of sintered ceramics (Halls and Leach, 1998). Conventional detection systems for spectral CL use a parabolic mirror and light guide coupled to a dispersing diffraction grating and sensitive PMT.…”

Section: Introductionmentioning

confidence: 99%

Fiber-optic Based Spectral Cathodoluminescence: Simple and Economic Option for Use in Conventional and Environmental Scanning Electron Microscopy

Griffin

Browne

2000

Microsc. Microanal.

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A fiber-optic based spectral cathodoluminescence (CL) system has been successfully installed on a variable pressure “environmental” scanning electron microscope (ESEM). The fine size of the fiber (50 μm) has been found to require careful alignment. To provide this alignment, a simple X–Y translator has been used. The aligned fiber exhibits high efficiency and the system has recorded spectra at up to 3 million “counts” per sec on strongly cathodoluminescent doped yttrium aluminium garnet (YAG) samples, at 30 kV and ˜3 nA. A resolution of 3 nm [full width half maximum (FWHM)] at 621 nm has been measured from a red laser diode spectrum, on the ESEM column. A range of uncoated materials has been measured to characterize the CL system; these materials ranged from strongly luminescent YAG to weakly luminescent polymers. Wellcharacterized doped zircons have also been investigated. These data suggest that the previously reported intrinsic peak from zircon is a consequence of high-beam currents.

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Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence

Cited by 7 publications

References 21 publications

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Spatially resolved Raman and cathodoluminescence probes in electronic materials: Basics and applications

Fiber-optic Based Spectral Cathodoluminescence: Simple and Economic Option for Use in Conventional and Environmental Scanning Electron Microscopy

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