2009
DOI: 10.1590/s1516-14392009000100011
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Study of diamond film interface structure and contacting area

Abstract: High purity diamond film has been grown by refined Combustion Flame method with high oxygen proportion. Snapshots of time series of the diamond film forming were taken and a model was derived. By observing the period of seeding to coalescing of diamond crystals to form film, it is realized that the contacting area is small and the calculated value was less than 15%. It is also found that the base layer of the film was porous as a result of non-uniform crystal growth. To enhance adhesion of the film, the contac… Show more

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Cited by 4 publications
(2 citation statements)
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“…The dislocations network and hot-spots were discussed in Introduction. Following the publications by Williams et al [30], Williams [31] and Setasuwon and Metanawin [32], a structure at the interface between the diamond film and the Si substrate is schematically shown in Figure 5. The properties of the diamond film structure formed during the early stage of the film growth can differ from those of the core part of diamond film.…”
Section: Resultsmentioning
confidence: 99%
“…The dislocations network and hot-spots were discussed in Introduction. Following the publications by Williams et al [30], Williams [31] and Setasuwon and Metanawin [32], a structure at the interface between the diamond film and the Si substrate is schematically shown in Figure 5. The properties of the diamond film structure formed during the early stage of the film growth can differ from those of the core part of diamond film.…”
Section: Resultsmentioning
confidence: 99%
“…The NCD structure consists of seeding particles, diamond grains and ballas-like nano-diamond material between the grains (Fig. 4a) [9][10][11]. Assuming Hertz contact between the ball and the film, the maximum contact pressure is 2.4 GPa.…”
mentioning
confidence: 99%