Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors

Yang, Ming; Gao, Zhiliang; Su, Xinguang; Wang, Yuanyuan; Han, Yahong; Xu, Tao; Li, Ben; He, Jihao; Li, Jun; Wang, Ruojue; Liu, Xiao; Mei, Fei; Wang, Lei; Zhou, Li; Song, Wei; Liu, Ying‐Qian; Wan, Fang; Cui, Zhengang; Liu, Bin

doi:10.1109/ted.2022.3159283

Cited by 3 publications

(2 citation statements)

References 34 publications

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“…As shown in Fig. 3(a) ， the additional polarization charge distribution of the AlGaN barrier layer is significantly affected by V gs variations [15,16,[21][22][23][24]. PCF scattering plays a dominant role in the phenomenon that electron velocity decreases continuously as the gate bias decreases in AlGaN/GaN HFETs.…”

Section: Velocity-field Relationship Model and I-v Modelmentioning

confidence: 97%

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Wang,

Lv,

Zhou

et al. 2024

IEEE Access

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In this paper, a gate bias-dependent velocity-field relationship model and a physics-based analytical model of current-voltage characteristics in AlGaN/GaN HFETs are developed. Based on Monte Carlo simulations, the experimental phenomenon that the channel electron velocity varies with the gate voltage is successfully reproduced. A modified gate bias-dependent velocity-field relationship model is established to obtain the velocity-field relationship of our fabricated AlGaN/GaN HFETs considering Polarization Coulomb Field (PCF) Scattering. This new velocity-field model can accurately describe the experimental phenomenon of velocity modulation by various gate biases and effectively reduce the fitting parameters. The parameters of the velocity-field model are incorporated into the compact model. The method cleverly maintains the direct relation between the velocity-field model parameters and AlGaN/GaN HFETs. All parameters have a specific physical meaning in our compact model and parasitic resistance factors and channel modulation effects are also incorporated. We validate the model with experimental data for AlGaN/GaN HFETs with gate lengths of 0.2 µm and 0.35 µm, respectively, and obtain good agreement. INDEX TERMS Monte Carlo; Compact model; Velocity-field relationship; AlGaN/GaN HFETs; Polarization Coulomb Field Scattering.

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Section: Velocity-field Relationship Model and I-v Modelmentioning

confidence: 97%

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Wang,

Lv,

Zhou

et al. 2024

IEEE Access

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“…The traditional way of identifying Tang and Song literature mainly evaluates the language of the text, which cannot accurately judge the content of the text, and the grading is in uenced by the length of the text. In addition, based on different literary concepts, there are different requirements and understanding of creative content and expression [3]. Most scholars have studied the automatic literary appraisal system of the Tang and Song dynasties, the key of which is to evaluate the accuracy and validity of literary appraisal in the Tang and Song dynasties, which has signi cant practical value for advancing the accuracy and validity of the integration of multidimensional spatio-temporal object network analysis and in-depth analysis [4].…”

Section: Introductionmentioning

confidence: 99%

A Study on IOT Technology and Its Application in the Appreciation of Tang and Song Literature

Sheng

Jia

2023

Preprint

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How to achieve efficient appreciation and intelligent parsing of Tang and Song literatures are two major difficulties in the field of studying Tang and Song literatures nowadays. Based on this, this paper investigates the application of multidimensional spatio-temporal IoT parsing model combined with cone stacking algorithm in the appreciation of Tang and Song literatures. Firstly, we summarize the current research status of Tang and Song literature appreciation, and propose a multidimensional spatio-temporal IoT analysis model based on cone stacking algorithm according to the characteristics of Tang and Song literature, and combine the application ideas of various appreciation models in Tang and Song literature appreciation to normalize the multidimensional analysis of traditional Tang and Song literature database to achieve accurate appreciation from different perspectives, and then analyze the accuracy and objectivity of the appreciation model. The accuracy and objectivity of the appreciation model are then analyzed. Secondly, the set of evaluation functions of the multidimensional spatio-temporal IoT analysis model in this application is constructed, and the characteristics and appreciation ideas of current literary masters are combined in the optimal appreciation, and the error of the composite appreciation analysis function is improved, while the cone stacking algorithm is combined with the multidimensional spatio-temporal IoT analysis appreciation model to realize the internal intelligent learning. Finally, a validation experiment is designed, and the results show that the multidimensional spatio-temporal IoT analysis model based on the cone stacking algorithm can quickly and accurately achieve the appreciation of conventional Tang and Song literature from multiple levels.

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Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs

Wang

Wen

et al. 2022

IEEE Electron Device Lett.

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Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors

Cited by 3 publications

References 34 publications

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

A Study on IOT Technology and Its Application in the Appreciation of Tang and Song Literature

Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs

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