Study of effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire Tunnel FET

Biswal, Sudhansu Mohan; Baral, Biswajit; De, Debashis; Sarkar, Angsuman

doi:10.1016/j.spmi.2016.01.021

Cited by 46 publications

(15 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several papers using a semi-classical approach to describe trap assisted tunneling by using a modified Shockley-Read-Hall formula found that traps can produce a sizable degradation of the SS, and investigated the minimum trap densities necessary for a steep slope behavior [51,120,[139][140][141]. In very recent references, for instance, it has been argued that the trap density should be decreased by 100 times with respect to the state of the art values in order to obtain IIIV TFETs with an SS below 60 mV/dec at room temperature [142].…”

Section: Effects Of Non-ideal Interfaces Defects and Trapsmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

show abstract

Section: Effects Of Non-ideal Interfaces Defects and Trapsmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…One of the most important approaches is to design and simulate analytical nanostructures. Many significant devices can be designed using this simulation procedure and analyze the obtained results [ 47 , 55 , 56 ]. According to the result, the researchers can modify the various simulation parameters as well as the different aspects of the nanoscale analytical model.…”

Section: Molecular-level Research Work Based On Electrical Dopingmentioning

confidence: 99%

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Dey

Ahmadian

et al. 2021

Nanoscale Res Lett

Self Cite

View full text Add to dashboard Cite

Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.

show abstract

“…It is evident that for channel length equal to10 nm better distortion suppression is acquired. IIP 3 is other important FOM that evaluates the linearity performance and is given by the following [27][28][29] :…”

Section: Impact Of Gate-length Downscaling On Linearity Performance Pmentioning

confidence: 99%

“…Linearity is directly proportional to transconductance and is inversely proportional to the second derivative of the transconductance. 27 It signifies that the devices with constant transconductance versus gate voltage curves, and trifling disparity across a particular voltage range, are more linear. In the following analysis of linearity for a JL DGMOS, g m 1 , g m 2 , and g m 3 are given by the following:…”

Section: Impact Of Gate-length Downscaling On Linearity Performancmentioning

confidence: 99%

“…These are the appropriate FOMs that pin down the distortion characteristics from DC parameters; to achieve high-linearity and low distortion operations, these should be as high as possible. VIP 2 and VIP 3 denote the extrapolated gate-voltage amplitudes at which the second and third-order harmonics intercept current become identical to the fundamental tone in the device drain current ( I D ), respectively, and becomes equal to the fundamental tone in the device drain current ( I D ) and is given by the following 17,27 :…”

Section: Impact Of Gate-length Downscaling On Linearity Performancmentioning

confidence: 99%

See 1 more Smart Citation

Radio frequency/analog and linearity performance of a junctionless double gate metal–oxide–semiconductor field-effect transistor

Baral¹,

Biswal²,

et al. 2017

SIMULATION

Self Cite

View full text Add to dashboard Cite

The analog/radio frequency (RF) and linearity performance of a junctionless double gate metal-oxide-semiconductor field-effect transistor (JL DGMOS) is investigated using the numerical TCAD device simulator. JL DGMOSs have shown great promise for high-performance digital applications due to their superior short channel effect performance and ease of fabrication. In analog and RF circuit applications, linearity testing and RF performance is a major issue that is encountered due to non-linear behavior of the devices. Therefore, in this paper, different RF/analog and linearity performance figures of merits such as transconductance, intrinsic gain, the transconductance generation factor, the cut off frequency, the maximum frequency of oscillation, the gain bandwidth product, the variable intercept point of second order, the variable intercept point of third order, inter modulation distortion, the third-order intercept point, and 1-dB compression have been presented. Moreover, the effect of gate-length downscaling on these performance parameters has been carried out. The results indicate that the down scaled JL DGMOS shows great promise to become a competitive contender for analog/mixed signal system on chip applications by demonstrating a significant improvement in its RF performance with gate-length downscaling.

show abstract

Study of effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire Tunnel FET

Cited by 46 publications

References 23 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

Radio frequency/analog and linearity performance of a junctionless double gate metal–oxide–semiconductor field-effect transistor

Contact Info

Product

Resources

About