1990
DOI: 10.1063/1.104135
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Study of electrical characteristics of polyoxides grown by rapid thermal oxdidation

Abstract: Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing Electrical and structural properties of poly-Si films grown by furnace and rapid thermal annealing of amorphous Si

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Cited by 2 publications
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“…In general, the rapid thermal oxidation ͑RTO͒-grown polyoxide has a higher breakdown field ͑8-9 MV/cm͒ and reduced leakage current than that grown in the conventional furnace ͑5-6 MV/cm͒ due to smoother interface by the rapid thermal process. 32 Furthermore, the RTN 2 O-grown polyoxide at moderate growth temperature can reach a high breakdown field ͑13-14 MV/cm͒ and low leakage current due to nitrogen incorporated and existing in the interfaces. But when RTN 2 O oxidation occurs at higher temperatures, excessive nitrogen incorporated at the Si/SiO 2 interface leads to an inhomogeneous oxide growth and thickness nonuniformity.…”
Section: Resultsmentioning
confidence: 99%
“…In general, the rapid thermal oxidation ͑RTO͒-grown polyoxide has a higher breakdown field ͑8-9 MV/cm͒ and reduced leakage current than that grown in the conventional furnace ͑5-6 MV/cm͒ due to smoother interface by the rapid thermal process. 32 Furthermore, the RTN 2 O-grown polyoxide at moderate growth temperature can reach a high breakdown field ͑13-14 MV/cm͒ and low leakage current due to nitrogen incorporated and existing in the interfaces. But when RTN 2 O oxidation occurs at higher temperatures, excessive nitrogen incorporated at the Si/SiO 2 interface leads to an inhomogeneous oxide growth and thickness nonuniformity.…”
Section: Resultsmentioning
confidence: 99%