Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

Abstract

This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO 2 interface of the emitter-base spacer oxide, which leads to an excess recombination base current.

Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

“…This is to examine the effects of the electromagnetic near-field stress on our component and locate the areas of high field levels where this field is most influential on the coupling phenomenon with the DUT. Worth noting is that the magnitudes of electric and magnetic fields of the loop fed by 40 dBm at 1 GHz reach their maximum 6500 V m −1 and 58 A m −1 , respectively, in the range of 3 × 3 mm 2 , which is obtained on the plane perpendicular to the surface of the loop 1 mm below it [8,9]. The configuration (P = 40 dBm, f = 1 GHz and H = 1 mm) is used in our experimental setup, for the first time, in order to accelerate our stress [10] and take into account the amount of power that can be reflected because the probe is mismatched.…”

“…As described in our previous work [8], the near-field disturbance method is based on the use of a miniature nearfield probe localized above the device under test (DUT) at a given height H to produce a strong localized electromagnetic field. The magnetic probe, used in this study, consists of a small loop with a diameter of 10 mm, and it is made up of an inner conductor to produce an electromagnetic field where the magnetic field is dominant.…”

Electromagnetic pulse effects and damage mechanism on the semiconductor electronics

“…8). The same effect of the increase of the recombination current has been in heterojunction bipolar transistor [10]. But it is necessaryto note that this effect take place only at low level EMP power.…”

STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs

“…To evaluate the reliability behavior within these devices and to identify the degradation mechanisms due to the electromagnetic field effects, different stress conditions have been applied. The stress procedure consists of a near-field disturbance system which includes equipment used for generation of the electromagnetic field such as a signal generator, power amplifier, and a miniature near-field probe localized above the device under test [ 6 ]. The stress has been applied on a minimum set of five devices in order to minimize the technological dispersion effects.…”

“…To analyze the effects of the electromagnetic near-field stress on our component and in order to relate the performance degradations to the microstructural defects, the HBTs are characterized before destructive failure analysis. Among the different static and dynamic performance degradations, this paper may explain the large deviation of the dynamic performances [ 6 , 10 ]. In fact, the commonly associated mechanisms responsible for the dynamic characteristics degradations are the generation of a damage region at the metal interfaces (metallurgic interactions) [ 10 , 11 ].…”