Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy

Bhuiyan, Md. Nurul Kabir; Matsuda, Akinori; Yasumura, T.; Tambo, T.; Tatsuyama, C.

doi:10.1016/s0169-4332(03)00452-5

Cited by 19 publications

(11 citation statements)

References 16 publications

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“…The value of 6.32 nm for the surface roughness of the STO film grown on platinized sapphire is very close to the value of 5 nm observed for 100 nm thick STO thin film grown by molecular beam epitaxy. 26 Annealed atomic layer deposited (ALD) STO films yielded significantly smoother surface roughness of $3.5 nm for a 280 nm thick STO thin film on platinized Si. 27 Extremely low values of RMS roughness, less than 3 nm, have been reported for STO films grown via the MOSD technique.…”

Section: -2mentioning

confidence: 99%

Some unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films

Shreiber

Cole

Enriquez

et al. 2014

Journal of Applied Physics

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Section: -2mentioning

confidence: 99%

Some unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films

Shreiber

Cole

Enriquez

et al. 2014

Journal of Applied Physics

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“…STO ferroelectric thin film is the basis for realization of electronic integration. There are several technologies of preparing STO thin films which has a widely use in current application, such as Sol -gel (Sol-Gel) method [5][6] , chemical vapor deposition (CVD) method [7] , RF sputtering (RF) method [8] , molecular beam epitaxy (MBE) method [9] and pulsed laser deposition (PLD) method [10][11][12][13] and so on.…”

Section: Introductionmentioning

confidence: 99%

Effect of variable substrate temperature for SrTiO 3 thin films using pulsed laser deposition

Wan

Wang

et al. 2010

SPIE Proceedings

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In this paper, the high temperature solid state reaction method was applied to the preparation of SrTiO 3 ceramic target.The phase of the target has been researched in experiment by X-ray diffraction (XRD). We found that solid state reaction has achieved completely. Then SrTiO 3 thin films on MgO (100) substrate were manufactured by PLD using the triple-frequency harmonics of pulsed laser Nd: YAG. The thickness of the SrTiO 3 thin films was measured using a stylus profiler. Their microstructure and surface morphology were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Their optical character was characterized using optical transmission spectrum. Additionally, X-ray photoelectron spectroscopy (XPS) spectra were used to characterize the surface chemical composition of the SrTiO 3 thin film. In accordance with the above text result, the relation between the substrate temperature and the SrTiO 3 thin films' the structure and character was analyzed and discussed. With increasing temperature of the substrate, film grain size gradually increased and then smaller. The optimized substrate temperature was found to be 700°C at which the STO films' structure could uniformly dense. The STO films present a low optical absorption in the 400~1000nm wavelength range, and the substrate temperature is not the main reason for the impact of the optical absorption. The optical band gap energy was found to be about 3.5 ~ 4.0eV for the STO thin film. The valences of the three elements (Sr, Ti, and O) in the STO film prepared by PLD are 2+, 4+ and 2-, respectively.

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“…Several thin film deposition techniques, including molecular beam epitaxy ͑MBE͒ and metal-organic chemical vapor deposition ͑MOCVD͒, have been adopted for the synthesis of STO. 2,12 While the processing conditions and thin film growth mechanisms are significantly different in these deposition processes, it is noted that the use of strontium ͑or strontium oxide͒ template has become a common and-to a certain extent-"standard" procedure in the latest literature reports. The major purpose of introducing such a template is to suppress the formation of an amorphous silicon oxide layer on the Si surface and assist the growth of STO.…”

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confidence: 99%

“…5,8,9,[12][13][14] Under optimal conditions, it has been reported that high quality STO films have been deposited ͑by MBE and MOCVD͒ on Si. 2,12 In this letter, we report on the epitaxial growth of STO on Si by laser molecular beam epitaxy ͑laser MBE͒ using a SrTiO 3 ceramic target. Compared with many other thin film deposition methods ͑such as magnetron sputtering and MBE͒, the laser-MBE technique has the advantage of precise composition control.…”

mentioning

confidence: 99%

“…The major purpose of introducing such a template is to suppress the formation of an amorphous silicon oxide layer on the Si surface and assist the growth of STO. 5,8,9,[12][13][14] Under optimal conditions, it has been reported that high quality STO films have been deposited ͑by MBE and MOCVD͒ on Si. 2,12 In this letter, we report on the epitaxial growth of STO on Si by laser molecular beam epitaxy ͑laser MBE͒ using a SrTiO 3 ceramic target.…”

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Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

Zhou

Miao

Chan

et al. 2007

Applied Physics Letters

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SrTiO 3 thin films have been deposited on Si ͑001͒ wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 / Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2430407͔The epitaxial growth of SrTiO 3 ͑STO͒ thin film on silicon has attracted extensive interest in recent years.1,2 The STO/Si heterostructure not only provides an ideal model structure for the study of growth dynamics and kinetics of pervoskite-structured oxides on silicon 3-8 but is also a useful substrate for various microelectronic devices, such as silicon complementary metal oxide semiconductor devices, random access memory, and microelectromechanical systems. 9-11Good crystallinity, epitaxial alignment, and clean interface are the major requirements of STO and the STO/Si heterostructure. Several thin film deposition techniques, including molecular beam epitaxy ͑MBE͒ and metal-organic chemical vapor deposition ͑MOCVD͒, have been adopted for the synthesis of STO. 2,12 While the processing conditions and thin film growth mechanisms are significantly different in these deposition processes, it is noted that the use of strontium ͑or strontium oxide͒ template has become a common and-to a certain extent-"standard" procedure in the latest literature reports. The major purpose of introducing such a template is to suppress the formation of an amorphous silicon oxide layer on the Si surface and assist the growth of STO. 5,8,9,[12][13][14] Under optimal conditions, it has been reported that high quality STO films have been deposited ͑by MBE and MOCVD͒ on Si. 2,12 In this letter, we report on the epitaxial growth of STO on Si by laser molecular beam epitaxy ͑laser MBE͒ using a SrTiO 3 ceramic target. Compared with many other thin film deposition methods ͑such as magnetron sputtering and MBE͒, the laser-MBE technique has the advantage of precise composition control. The possible disadvantage of this technique, however, is that the use of a ceramic target may make it more difficult to obtain a clean interface between STO and Si. This is because the plume ͑generated by the irradiation of the ceramic surface by a pulsed laser beam͒ may contain quite a number of oxygen atoms and ions which can react with silicon, leading to the formation of an amorphous silicon oxide layer on the substrate surface. Thus how to suppress or prevent the oxidizing reactions is the major problem to be tackled in this work.The deposition was conducted via a three-step procedure: ͑1͒ Wet cleaning, a ͑001͒ Si wafer was treated by standard chemical cleaning procedures followed by HF etching. Th...

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Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy

Cited by 19 publications

References 16 publications

Some unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films

Some unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films

Effect of variable substrate temperature for SrTiO 3 thin films using pulsed laser deposition

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

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