Study of factors limiting electron mobility in InSb quantum wells

Abstract

Articles you may be interested inHigh electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates J. Vac. Sci. Technol. B 32, 02C116 (2014); 10.1116/1.4866397 Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates Impact of structural defects upon electron mobility in InSb quantum wellsWe observe a significant increase in InSb quantum-well mobility when remote doping of Al 0.09 In 0.91 Sb barriers is accomplished by three layers, rather than one layer, of Si ␦ doping. At 7 K, the electron mobility in single quantum-well structures grown on GaAs substrates is as high as 280 000 cm 2 /V s with an electron density of 2.33ϫ10 11 cm Ϫ2 . The density of oriented abrupt steps and square-mound features on the sample surface correlates with the electron mobility in the well.

Growth of high quality, epitaxial InSb nanowires

“…Indium antimonide (InSb) (melting point$525 1C) is a narrow bandgap semiconductor, well known for its highest bulk electron mobility, smallest effective mass, and largest g factor among binary III-V materials [1]. It therefore has potential electronic applications in high-speed devices [2,3] magnetoresistors [4], and has been used previously as magnetic sensors [5], and infrared (IR) detectors [6].…”

Field effect transistor based on single crystalline InSb nanowire

“…3 Among the III-V group, indium antimonide (InSb) has the smallest band gap energy (170 meV) at room temperature and possess an extremely high bulk electron mobility. 2,4,5 It has been widely used in infrared optoelectronics and high-speed devices, and has inspired significant interest for fundamental studies in their nanostructure form for potential application as high speed nanoelectronic devices.…”

Ballistic transport in InSb quantum wells at high temperature

“…For a discussion of the layer structure, see [7]. The layer sequence above the GaAs substrate was 1 m AlSb bu er layer, ∼ 1 m Al 0:15 In 0:85 Sb, a 10-period 2:5 nm Al 0:15 In 0:85 -Sb=2:5 nm InSb strained layer superlattice, and ∼ 2 m Al 0:15 In 0:85 Sb.…”