Study of GaN films grown by metalorganic chemical vapour deposition

Abstract

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH 4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

“…Due to the substitution of Si dopants in gallium lattice sites, an increase in the Si-doping concentration can reduce the number of gallium vacancies. Similar phenomena are also been observed in previous reports [8,9].…”

Effects of alloy potential fluctuations in InGaN epitaxial films

“…The spectrum is dominated by a single emission band with a peak centred at 2.79 eV and there is no observable deep level emission. According to a previous report [9], the peak position centred at 2.79 eV corresponds to 30% indium content. The full width at halfmaximum of the PL spectrum is about 200 meV which is comparable with the reported data [9].…”

“…According to a previous report [9], the peak position centred at 2.79 eV corresponds to 30% indium content. The full width at halfmaximum of the PL spectrum is about 200 meV which is comparable with the reported data [9]. To investigate further the alloy properties of the InGaN epilayer, we measured the dependence of the PL spectra on temperature and excitation intensity.…”

MOVPE growth optimization of high quality InGaN films.

“…Ammonia (NH 3 ), trimethyl-gallium (TMG) and trimethyl-indium (TMI) were used as source materials. The growth was conducted in a close spaced vertical rotating disk reactor, manufactured by Thomas Swan & Co [1] [2]. Deposition was performed under atmospheric pressure.…”