Study of grains size distribution and electrical activity of heavily boron doped polysilicon thin films

Bouridah, Hachemi; Bouaziz, Fatiha; Mansour, F.; Mahamdi, R.; Temple‐Boyer, Pierre

doi:10.1016/j.mssp.2011.04.006

Cited by 2 publications

(1 citation statement)

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“…The crystalline fraction Xc is calculated using the following expression [18]: which indicates the presence of amorphous silicon [19,20] and another at 514 cm -1 originating from nanocrystalline phase in the film [19]. Note that the peak characteristic of Si-NCs is more intense than that of amorphous silicon showing a formation of a significant portion of nanocrystalline silicon in the annealed thin film.…”

Section: Resultsmentioning

confidence: 99%

Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Haoues

Bouridah

Beghoul

et al. 2013

Materials Science in Semiconductor Processing

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Silicon nanocrystals have been produced by thermal annealing of SiNx thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70 %, and a dominance of silicon nanocrystallites having the sizes within the range 2.5-5 nm and density ~1.98.10 12 /cm 2. The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.

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