Study of growth rate and failure mode of chemically vapour deposited TiN, TiCxNy and TiC on cemented tungsten carbide

Cho, J. S.; Nam, Soo Woo; Chun, John S.

doi:10.1007/bf00543880

Cited by 40 publications

(10 citation statements)

References 7 publications

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“…Thus, it is believed that the controlling process for ZrC deposition is the carbon deposition process. Similar phenomena were also observed in the B 4 C deposition from the BCl 3 /CH 4 /H 2 system, 15 and in the TiC deposition from the TiCl 4 /CH 4 /H 2 system 23 . The activation energies for these two systems are both around 380 kJ/mol, which is close to the activation energy for pyrolytic carbon from CH 4 .…”

Section: Resultssupporting

confidence: 76%

“…Similar phenomena were also observed in the B 4 C deposition from the BCl 3 /CH 4 /H 2 system, 15 and in the TiC deposition from the TiCl 4 /CH 4 /H 2 system. 23 The activation energies for these two systems are both around 380 kJ/mol, which is close to the activation energy for pyrolytic carbon from CH 4 . Although the final products for the three systems are different and the reactions are various, the activation energies are close to each other.…”

Section: Resultssupporting

confidence: 62%

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Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

Wang

Liu

et al. 2008

Journal of the American Ceramic Society

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Zirconium carbide (ZrC) coatings were fabricated by chemical vapor deposition (CVD) using ZrCl4, CH4/C3H6, and H2 as precursors. Both thermodynamic calculation results and the film compositions at different temperatures indicated that zirconium and carbon deposited separately during the CVD process. The ZrC deposition rates were measured for CH4 or C3H6 as carbon sources at different temperatures based on coating thickness. The activation energies for ZrC deposition demonstrated that the CVD ZrC process is controlled by the carbon deposition. This is also proven by the morphologies of ZrC coatings.

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Section: Resultssupporting

confidence: 76%

Section: Resultssupporting

confidence: 62%

Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

Wang

Liu

et al. 2008

Journal of the American Ceramic Society

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“…The introduction of N H 3 gas (which is more active than N2 gas) through a double-tube nozzle (which prevents premature reactions) into the cold-wall type CVD chamber must have enabled the highest deposition rate. [3], (T) [4], (111) [6], (0) [7]. Cold-wall type CVD: ((3) [5], (A) [15], ( 9 present work.…”

Section: Resultsmentioning

confidence: 98%

“…Cold-wall type CVD: ((3) [5], (A) [15], ( 9 present work. TiCI~ + N 2 system: (A) [2], (•) [3], (T) [4]. ( 9 [5], (111) [6], (0) [7].…”

Section: Resultsmentioning

confidence: 99%

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Deposition rates of titanium nitride plates prepared by chemical vapour deposition of TiCl4+NH3 system

1993

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Titanium nitride plates (TiN x, x = 0.74-1.0, about 2 mm thick maximum) were prepared by chemical vapour deposition (CVD) using TiCI 4, NH a and H 2 as source gases. The effects of CVD conditions, i.e. gas molar ratio (mN/r~ = NH3/TiCI4) and deposition temperature (T~ep), on deposition rates and surface morphology were examined, and the deposition mechanism of the CVD-TiN X plates was discussed. The relationship between mN/T= and deposition rates showed a maximum peak at certain mN/Ti, and this maximum peak shifted to lower mN/Ti with increasing Taep. The activation energy for the formation of CVD-TiN X plates was about 80 kJ mo1-1 in the lower temperature range. The decomposition reaction of NH z gas could be associated with the rate-controlling step. At higher temperatures, the diffusion process may be the rate-controlling step, and a large amount of powder (mainly NH4CI ) was formed in the gas phase. The highest deposition rate obtained in the present work was 1.06 x 10 -7 ms -1 (0.38 mm h -1) at Tde p = 1773 K and mN/Ti = 0.87. IntroductionTitanium nitride (TiNx) film is widely used as a coating for tools owing to its erosion/corrosion resistance and good compatibility with metals, and as decorative coatings owing to its colour similar to gold [1].There are several methods, such as sputtering, ionplating and chemical vapour deposition (CVD), for the preparation of TiN, films. CVD is advantageous to obtain high-purity and high-density films at high deposition rates. The CVD conditions, such as deposition temperature, source gas ratio, gas flow rate and total gas pressure, should be optimized for the highest deposition rates.TiCI 4 is commonly used as the titanium source, and either NH 3 or N z gas may be chosen as the nitrogen source for preparing TiNx by CVD. The TiC14 + N 2 system has been employed in many reports [2-7-1, because NH 3 gas was thought to be too active to control the CVD process.We have prepared CVD-TiN~ plates whose composition (x = N/Ti) ranged between 0.74 and 1.0 by using the TIC14 + NH 3 system [8]. In the present work, the effects of CVD conditions on deposition rates and surface morphology were investigated, and the optimum conditions for the highest deposition rate were obtained. The deposition mechanism of the CVD-TiNx plates was also discussed.

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Composition dependence of the initial oxidation behaviour of Ti1−xAlxN (x = 0.20, 0.45, 0.65) films studied by XAS and XPS

Esaka

Furuya

Shimada

et al. 1999

Surf. Interface Anal.

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Study of growth rate and failure mode of chemically vapour deposited TiN, TiCxNy and TiC on cemented tungsten carbide

Cited by 40 publications

References 7 publications

Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

Deposition Mechanism for Chemical Vapor Deposition of Zirconium Carbide Coatings

Deposition rates of titanium nitride plates prepared by chemical vapour deposition of TiCl4+NH3 system

Composition dependence of the initial oxidation behaviour of Ti1−xAlxN (x = 0.20, 0.45, 0.65) films studied by XAS and XPS

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