The terahertz (THz) emission properties of GaAs photoconductive antennas with strong electric fields are discussed; the transient transport characteristics of non-equilibrium carriers (hot electrons) within the photoconductive antenna were comparatively analyzed. It is shown that there are significant differences in the average drift velocity variation with strong and weak electric field. In the initial phase, optical wave scattering is mainly caused by small-angle scattering, carriers are accelerated by ballistic transport to reach higher electron energy in a shorter time, and the transient drift-velocity quickly rises, which is a main reason of the stronger THz radiation.