Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions

Yin, Zhen‐Qiang; Liu, Wei; Sentosa, Deny; Zhao, Jinghua; Zhang, Dao Hua

doi:10.1007/s11051-006-9161-y

Cited by 4 publications

(5 citation statements)

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“…[6][7][8] Selfassembled quantum dots (QDs), in particular, have attracted attention due to their atom-like behavior and three dimensional quantum confinement. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] In fact, QDs are so much like an atom that one can even begin to consider clusters and lattices composed of QD elements that share charge carriers.…”

Section: Introductionmentioning

confidence: 99%

“…[15,16] Because S-K nucleation takes place randomly over the surface, the growth of ordered quantum dots (QDs) is somewhat restricted when one relies solely on self-assembly. [17][18][19][20][21] The use of pre-patterned substrates can over come this restriction but is thus far limited to seeded growth along certain surface directions or shapes, depending on the substrate orientation.…”

Section: Introductionmentioning

confidence: 99%

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Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

Lee

Wang

Black

et al. 2007

Adv Funct Materials

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We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based on the underlying science, this growth approach enables the localization of InAs QDs on GaAs (100) by controlling the sidewall facets and InAs monolayer coverage.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

Lee

Wang

Black

et al. 2007

Adv Funct Materials

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“…Локализация фотогенерированных носителей заряда в квантовой точке по трем направлениям способствует умень-шению термоэлектронной эмиссии и приводит к снижению темнового тока [13; 14]. Традиционными методами выращивания гетероструктур AIIIBV яв-ляются газофазная эпитаксия металлорганических соединений (MOVPE) [15][16][17] и молекулярно-луче-вая эпитаксия (MBE) [18; 19]. При всех несомнен-ных преимуществах указанных методов им прису-щи и недостатки.…”

Section: Introductionunclassified

THE STUDY OF InAs/GaAs HETEROSTRUCTURES WITH POTENTIAL BARRIERS AlGaAs

Blokhin¹,

Pashchenko²,

Lunin³

et al. 2017

Sc. South Russ.

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Аннотация. Проведены исследования фотолюминесценции и темновых вольт-амперных характе-ристик гетероструктур InAs/GaAs с тремя типами потенциальных барьеров для квантовых точек: GaAs, Al 0,2 Ga 0,8 As, Al 0,4 Ga 0,6 As. Гетероструктуры выращены методом ионно-лучевой кристаллизации. Наличие пиков излучения фотолюминесценции, обусловленных смачивающим слоем для трех типов потенци-альных барьеров, свидетельствует о росте квантовых точек InAs в режиме Странского -Крастанова. Введение в конструкцию широкозонных барьеров AlGaAs приводит к смещению пика излучения фо-толюминесценции основных состояний GS в квантовых точках InAs в высокоэнергетическую область (синее смещение) и увеличивает интенсивность пика. В случае использования барьеров Al x Ga 1-x As ха-рактерным признаком является уменьшение ширины пика излучения на половине максимума излуче-ния в сравнении с потенциальными барьерами GaAs. Изменение состава тройного твердого раствора Al x Ga 1-x As с x = 0,2 до x = 0,4 ат. %, покрывающего сверху квантовые точки InAs, приводит к повыше-нию интенсивности пика излучения основных состояний квантовых точек. Результаты исследования темновых вольт-амперных характеристик экспериментальных образцов показывают, что доминирую-щими механизмами переноса носителей заряда являются термоэлектронная эмиссия и туннелирова-ние, стимулированное внешним электрическим полем. Использование широкозонных потенциальных барьеров AlGaAs вместо GaAs способствует уменьшению напряжения смещения (до 0,48 В), при ко-тором происходит изменение механизма переноса носителей заряда с термоэмиссионного на туннели-рование, стимулированное внешним электрическим полем. Введение потенциального барьера состава Al 0,4 Ga 0,6 As позволяет добиться минимального темнового тока 10 -9 А в гетероструктурах InAs/GaAs с квантовыми точками.Ключевые слова: гетероструктуры InAs/GaAs, ИК-диапазон, барьер AlGaAs, оптоэлектроника, тройные твердые растворы на основе AIIIBV. abstract. Research has been conducted on the photoluminescence and the dark current-voltage characteristics of InAs/GaAs heterostructures with three types of potential barriers to the quantum dots: GaAs, Al 0,2 Ga 0,8 As, Al 0,4 Ga 0,6 As. Heterostructures were grown with an ion-beam crystallization method. The presence of the photoluminescence emission peaks specified by the wetting layer for the three types of potential barriers shows the Stransky Krastanow growth mode of InAs quantum dots. The introduction of wide-AlGaAs barriers into the design leads to the shift of the photoluminescence emission peak of the ground states (GS) in the InAs quantum dots into the high-energy region (blue shift) and increases the peak intensity. In case of Al x Ga 1-x As barrier usage the characteristic feature is the reduction of the emission peak width at half maximum of the emission, in comparison with the potential barriers of GaAs. It is shown that the change in the composition of the ternary solid solution Al x Ga 1-x As from x = 0.2 to x = 0.4 at. % which coats the InAs quantum dots from 1 Южный научный центр Росс...

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“…However, such technique does not enable obtaining of surface nanostructures with controlled parameters due to self-organization. Several possible ways for the modifications of growth processes were discussed in refs [15][16][17][18] . Nevertheless, more research is needed to explore the process of selforganization of metal deposits on the semiconductor surfaces in more detail.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

Gladskikh

Toropov

et al. 2016

SPIE Proceedings

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Self-assembled silver, gold, and copper nanostructures on the monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current-voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 2, 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands of Au and Ag nanostructures caused by major transformations of the film morphology. While the as prepared films predominantly had a small scale labyrinth structure, after annealing well-separated nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100 °C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.

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Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions

Cited by 4 publications

References 31 publications

Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

THE STUDY OF InAs/GaAs HETEROSTRUCTURES WITH POTENTIAL BARRIERS AlGaAs

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

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