Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses

Chen, Jun-Rong; Lu, Tien−Chang; Kuo, Hao‐Chung; Fang, Kai-Hung; Huang, Kai; Kuo, Chia Wei; Chang, Chung-Ying; Kuo, Cheng Ta; Wang, Shing-Chung

doi:10.1109/lpt.2010.2046483

Cited by 17 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the simulations, the polarization-induced charges at the interfaces for Ga-and N-polarity cases are strictly calculated by using similar methods developed by Wang et al [20] and Liu et al [21] In addition, AM1.5 incident sunlight is set to be from the top of these structures, and the surface reflectivity is set to be 18%. The Shockley-Read-Hall (SRH) recombination for the InGaN IL that is directly governed by the defect-related nonradiative SRH lifetime is set to be 1 ns, [22,23] and the degree of polarization is set to be 0.9 with considering that the actual polarization charge will be partially screened.…”

Section: Sample Structures and Calculation Methodsmentioning

confidence: 99%

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Lü

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

Performances of Ga-and N-polarity solar cells (SCs) adopting gradient-In-composition intrinsic layer (IL) are compared. It is found the gradient ILs can greatly weaken the negative influence from the polarization effects for the Gapolarity case, and the highest conversion efficiency (η) of 2.18% can be obtained in the structure with a linear increase of In composition in the IL from bottom to top. This is mainly attributed to the adsorptions of more photons caused by the higher In composition in the IL closer to the p-GaN window layer. In contrast, for the N-polarity case, the SC structure with an InGaN IL adopting fixed In composition prevails over the ones adopting the gradient-In-composition IL, where the highest η of 9.28% can be obtained at x of 0.62. N-polarity SC structures are proven to have greater potential preparations in high-efficient InGaN SCs.

show abstract

Section: Sample Structures and Calculation Methodsmentioning

confidence: 99%

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Lü

et al. 2016

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…The Original LED was constructed with a 3-lm-thick n-Al 0.55 Ga 0.45 N (electron concentration: 2.0 9 10 18 cm À3 ) and five periods of 2-nm-thick Al 0.38 Ga 0.62 N QWs separated by 10-nm-thick Al 0.50 Ga 0.50 N QBs. To avoid electron leakage from the MQWs, the thickness of the undoped last quantum barrier (LQB), i.e., Al 0.5 Ga 0.5 N, was set to 20 nm, 20,21 and then a 10-nm-thick p-Al 0.60 Ga 0.40 N electron blocking layer (EBL) (hole concentration: 1.5 9 10 17 cm À3 ) was designed on the top of the LQB. The design was capped with a 10nm-thick p-Al 0.55 Ga 0.45 N (hole concentration: 2.5 9 10 17 cm À3 ).…”

Section: Device Structures and Parametersmentioning

confidence: 99%

Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well

Wang

Zhang

et al. 2021

Journal of Elec Materi

View full text Add to dashboard Cite

Owing to poor hole-injection efficiency, conventional AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) generally suffer from a seriously inhomogeneous carrier distribution in the quantum well region. This leads to uneven radiative recombination rates, seriously affecting the luminous efficiency. In this paper, however, we propose an asymmetric quantum well (AQW) near the interface between the last quantum barrier and the electron blocking layer to fully utilize the inhomogeneous distribution characteristics. The optoelectronic performances of conventional and a proposed DUV-LED with an AQW have been numerically simulated and analyzed. The results reveal that electrons and holes tend to gather and recombine in the AQW region. This significantly enhances the internal quantum efficiency and the light output power with an improvement of about 120%, although it increases the peak emission wavelength red-shift. The peak emission wavelength of the AQW can be adjusted to the wavelength of the original structure while keeping a high optical efficiency by simply increasing the Al composition.

show abstract

“…The active region is composed of five 2.3-nm-thick undoped Al 0.38 Ga 0.62 N QWs sandwiched by 10-nm-thick Si doped Al 0.5 Ga 0.5 N QBs (n = 1.0 × 10 18 cm −3 ). To alleviate electron escape from the active region, the thickness of the undoped Al 0.5 Ga 0.5 N LQB is increased to 20 nm, 20,21) and a 10-nm-thick p-typeAl 0.65 Ga 0.35 N EBL (p = 5.0 × 10 16 cm −3 ) is grown on top of the LQB. Finally, the structure is finished with a 50-nm-thick p-type Al 0.5 Ga 0.5 N (p = 5.0 × 10 16 cm −3 ) and a 150-nm-thick p-type GaN contact layer (p = 1.0 × 10 18 cm −3 ), as shown schematically in Fig.…”

mentioning

confidence: 99%

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al_xGa_1-xN carrier reservoir layer

Zhao

Zhang

et al. 2019

Appl. Phys. Express

View full text Add to dashboard Cite

The advantages of using an AlxGa1-xN carrier reservoir layer (CRL) instead of the traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were investigated. The results indicate that the internal quantum efficiency is markedly enhanced and the efficiency droop phenomenon is alleviated. These improvements are mainly attributed to the significantly enhanced hole-injection and radiative recombination rate. Additionally, when the Al contents of the CRL gradually decrease to that of the quantum wells, a large number of electrons and holes are reserved in the CRL region and recombined to emit DUV light, leading to marked enhancement of the optical performance.

show abstract

Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses

Cited by 17 publications

References 17 publications

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al_xGa_1-xN carrier reservoir layer

Contact Info

Product

Resources

About

Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses

Cited by 17 publications

References 17 publications

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer

Contact Info

Product

Resources

About

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al_xGa_1-xN carrier reservoir layer