Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process

Abstract

Deposition of Hf-silicate gate dielectric on Si x Ge 1−x (100): Detection of interfacial layer growth J. Vac. Sci. Technol. A 22, 616 (2004); 10.1116/1.1710494Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics