Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering

Rao, Cnr; Sundaram, S.; Schmidt, R. L.; Comas, J.

doi:10.1063/1.332815

Cited by 86 publications

(18 citation statements)

References 34 publications

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“…The presence of additional bands cannot be accounted for as a result of stacking faults because each of these layers consists of a good-quality crystal. The existence of an amorphous-like material, similar to implanted InP can be treated as a possible explanation [29]. It is in agreement with the results of our previous observation of Te-doped nanowires having a very diverse quality.…”

Section: Resultssupporting

confidence: 82%

“…In the first one [17], the effect comes from bending nanowires; in this case bending provides both blue and red shift of the TO band, which makes this band broader. The second interpretation is that FWHM of the TO and LO band is the signature of the crystal quality [28,29]. In this experiment there has been no bending of wires so the broadening of TO band is more probably related to the crystal quality.…”

Section: Resultsmentioning

confidence: 99%

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InP nanowires quality control using SEM and Raman spectroscopy

Grodecki

Dumiszewska

Romaniec

et al. 2016

Materials Science-Poland

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Three different types of samples of InP nanowires, i.e. undoped, doped with Si and doped with Te, were grown and measured using SEM and Raman spectroscopy. Scanning Electron Microscope (SEM) images showed differences in the length, homogeneity and curvature of the nanowires. The most homogenous wires, grown most perpendicular to the surface, were those Si doped. They were also the shortest. Raman spectroscopy showed that the nanowires doped with Si had the lowest Full Width at Half Maximum (FWHM) TO band, which suggests the highest crystal quality of these wires. For the wires doped with Te, which were the most inhomogeneous, a low energy acoustic band was also observed, which suggests the lowest crystal quality of these structures.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

InP nanowires quality control using SEM and Raman spectroscopy

Grodecki

Dumiszewska

Romaniec

et al. 2016

Materials Science-Poland

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“…The lower-frequency peak corresponds to TO phonons, and the higher frequency peak corresponds to LO phonons. In backscattering, only LO phonons appear in the (100) direction [16]. The laser output power was fixed at 200 mW so as to avoid excess heating of the samples.…”

Section: Methodsmentioning

confidence: 99%

Optical Properties of GaSb Nanofibers

et al. 2010

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Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm-1 both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb–Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4–1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm), both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices.

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“…[ 22 ] It was reported that for the F43m symmetry materials (ZnS), the fi rst-order Raman spectrum consists of two peaks, corresponding to the longitudinal optical (LO) phonon and transverse optical (TO) phonon associated with the Brillouin zone centre. [ 23 ] It was further observed that the cubic ZnS crystals' TO and LO zone center phonons are located at 276 and 351 cm −1 , respectively. While the phonon modes of the hexagonal wurtzite type ZnS are located at 72 and 286 cm −1 , respectively.…”

Section: Morphology and Structurementioning

confidence: 98%

Improved Electrochemical Performance of Na‐Ion Batteries in Ether‐Based Electrolytes: A Case Study of ZnS Nanospheres

Kretschmer

Wang

2015

Advanced Energy Materials

241

162

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Sodium‐ion batteries are considered as a promising technology for large‐scale energy storage applications, owing to their low cost. However, there are many challenges for developing sodium‐ion batteries with high capacity, long cycle life, and high‐rate capability. Herein, the development of high‐performance sodium‐ion batteries using ZnS nanospheres as anode material and an ether‐based electrolyte, which exhibit improved electrochemical performance over the pure alkyl carbonate electrolytes, is reported. ZnS nanospheres deliver a high specific capacity of 1000 mA h g−1 and high initial Columbic efficiency of 90%. Electrochemical testing and first‐principle calculations demonstrate that the ether‐based solvent can facilitate charge transport, reduce the energy barrier for sodium‐ion diffusion, and thus enhance electrochemical performances. Ex situ measurements (X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) mapping) reveal that ZnS nanospheres maintain structural integrity during the charge and discharge processes over 100 cycles. As anode material for sodium‐ion batteries, ZnS nanospheres deliver high reversible sodium storage capacity, high Coulombic efficiencies, and extended cycle life.

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Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering

Cited by 86 publications

References 34 publications

InP nanowires quality control using SEM and Raman spectroscopy

InP nanowires quality control using SEM and Raman spectroscopy

Optical Properties of GaSb Nanofibers

Improved Electrochemical Performance of Na‐Ion Batteries in Ether‐Based Electrolytes: A Case Study of ZnS Nanospheres

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