Study of low-frequency excess noise in GaN materials

Leung, B.H.; Fong, W.K.; Surya, C.

doi:10.1016/s0925-3467(03)00084-3

Cited by 8 publications

(5 citation statements)

References 14 publications

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“…During the noise measurement, the applied bias ranges from 6 to 15 V with a step of 3 V. It was found that the spectra measured from the fabricated MSM PDs with the ZrO 2 insulating layer could be fitted reasonably well by the 1/f law for the entire frequency region (i.e., 3-1000 Hz). This indicates that the noise power observed in our devices is dominated by carrier number 26) and/or mobility fluctuations. 27) With the increase in applied bias voltage from 6 to 15 V, it was also found that the measured noise power density of the GaN MSM UV PDs with ZrO 2 insulating layers only increased slightly.…”

Section: Resultsmentioning

confidence: 74%

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO₂Insulating Layer

Chen

Tsai

et al. 2011

Jpn. J. Appl. Phys.

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GaN metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors (PDs) with ZrO2 insulating layers were successfully fabricated and characterized. It was found that we can achieve a small dark current and large photocurrent to dark current contrast ratio from the proposed devices with the use of ZrO2 insulating layers. With a 20 V applied bias, it was found that the leakage current of the fabricated MSM PDs with ZrO2 insulating layers was 1.73 ×10-10 A. This small leakage current should be attributed to the large barrier height caused by the insertion of the ZrO2 insulating layers. We can also achieve a large UV to visible rejection ratio from the PDs with ZrO2 insulating layers. Furthermore, it was also found that we can significantly reduce noise equivalent power and enhance detectivity by using ZrO2 insulating layers.

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Section: Resultsmentioning

confidence: 74%

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO₂Insulating Layer

Chen

Tsai

et al. 2011

Jpn. J. Appl. Phys.

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“…It was found that the spectra measured from both samples could be fitted reasonably well by the 1= f law only in the high-frequency region (i.e., 10 2 -10 5 Hz for sample B and 10 1 -10 5 Hz for sample A). This indicates that the noise power in the high-frequency region observed in our devices is dominated by carrier number 24) or mobility fluctuations 25) due to trapping-detrapping, which is strongly related to the dislocation density of the samples. In the low-frequency region (i.e., f < 10 Hz), it was found that noise power density was clearly enhanced compared with that in the 1= f law.…”

Section: Resultsmentioning

confidence: 80%

Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers

Chen

Wang

Tsai

et al. 2010

Jpn. J. Appl. Phys.

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GaN metal–semiconductor–metal (MSM) photodetectors with InN/GaN multiple nucleation layers were proposed and fabricated. We achieved a much smaller dark current and a larger photocurrent-to-dark current ratio from the proposed device with InN/GaN multiple nucleation layers than that from the GaN MSM photodetector with conventional single low-temperature GaN nucleation layer. We also achieved a much larger UV-to-visible spectral response ratio of photoresponse at 360–450 nm from the photodetector with InN/GaN multiple nucleation layers. Furthermore, we also found that we can significantly reduce noise current density using these InN/GaN multiple nucleation layers.

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“…These traps are mostly indicated at the low-frequency range from 10 Hz to 100 Hz. It was found that the noise spectral density was reasonably fitted to the 1/ƒ law, which is affected by trap/de-trap carriers at the interface and/or mobility fluctuations (4,15,16). A slight change of the slope over 200 Hz was possibly attributed to the surface recombination and generation.…”

Section: Resultsmentioning

confidence: 92%

GaN MISIM Diode with High-k Dielectrics of ZrO₂ and Al₂O₃ for UV Sensing

Lee

Seol

et al. 2016

ECS Trans.

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We fabricated a GaN MISIM (metal-insulator-semiconductor-insulator-metal) UV photodiode using two high-k dielectrics of ZrO2 and Al2O3. The fabricated UV photodiode using ZrO2 showed better photo-electronic properties than that using Al2O3. The dark and photo-responsive current density ratios of the device with ZrO2 and Al2O3 were 250 and 196 at 10 V bias. Their UV/visible rejection ratios (UVRRs) were 1.65 × 102 and 1.34 × 102 for 365 nm wavelength at 1 V bias, respectively. The noise spectral density of the device with ZrO2 was 1.3 × 102 A2/Hz for 10 Hz at 3 V bias which has lower noise value than that with Al2O3. The GaN MISIM UV photodiode with ZrO2 has over 20 % improved photo-electronic properties and lower noise than that with Al2O3.

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Study of low-frequency excess noise in GaN materials

Cited by 8 publications

References 14 publications

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO₂Insulating Layer

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO₂Insulating Layer

Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers

GaN MISIM Diode with High-k Dielectrics of ZrO₂ and Al₂O₃ for UV Sensing

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Study of low-frequency excess noise in GaN materials

Cited by 8 publications

References 14 publications

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer

Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers

GaN MISIM Diode with High-k Dielectrics of ZrO2 and Al2O3 for UV Sensing

Contact Info

Product

Resources

About

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO₂Insulating Layer

GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO₂Insulating Layer

GaN MISIM Diode with High-k Dielectrics of ZrO₂ and Al₂O₃ for UV Sensing