2012 IEEE 62nd Electronic Components and Technology Conference 2012
DOI: 10.1109/ectc.2012.6248799
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Study of low temperature and high heat-resistant fluxless bonding via nanoscale thin film control toward wafer-level multiple chip stacking for 3D LSI

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Cited by 4 publications
(2 citation statements)
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“…These methods may greatly reduce the temperature required at assembly, and therefore reduce the stress induced by thermal mismatch. Bonding materials reported in the literature include InSn by Morinaga et al [49], AuInSn by Xie et al [50], CuSn by Zhang, Agarwal et al [51,52] and Sakuma et al [53], CuInNi by Sakuma et al [53], etc. Agarwal et al used two relatively low-temperature processes for the CuSn material, TLP and solid metal bonding (SMB).…”
Section: Low-temperature Interconnectionmentioning
confidence: 99%
“…These methods may greatly reduce the temperature required at assembly, and therefore reduce the stress induced by thermal mismatch. Bonding materials reported in the literature include InSn by Morinaga et al [49], AuInSn by Xie et al [50], CuSn by Zhang, Agarwal et al [51,52] and Sakuma et al [53], CuInNi by Sakuma et al [53], etc. Agarwal et al used two relatively low-temperature processes for the CuSn material, TLP and solid metal bonding (SMB).…”
Section: Low-temperature Interconnectionmentioning
confidence: 99%
“…In recent years, lots of engineers and researches were carried out on manufacturing and characterization of TSV [1,2], bonding method corresponding to bond pair structure [3][4][5], thin wafer handling [6], novel assembly processes [7,8], testing methodologies and reliability of micro-bumps [9] [10]. It is aimed for assessing manufacturability of 2.5 & 3D ICs.…”
Section: Introductionmentioning
confidence: 99%