Study of Low-Temperature and Post-Stress Hysteresis in High-k Gate Dielectrics

Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

“…This is in agreement with the charge and discharge of defects situated near the semiconductor/dielectric interface [31]. In case of defects located near the metal/dielectric interface, reduced effects on C-V curves and with opposite hysteresis directions would be expected [57].…”