Study of metals by means of positive muons

Belousov, Yu. M.; Gorelkin, V. N.; Mikaélyan, A L; Miloserdin, V.Yu.; Smilga, V. P.

doi:10.1070/pu1979v022n09abeh005606

Cited by 13 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With HFI present, the polarization cannot be solved analytically in the time domain except in special cases. This polarization function has been studied in the context of muon spin rotation [19,31,32]. For only SOC (and Γ = 0), the polarization in the time domain is calculated exactly to be P(t) = e −kγ 2 t/3 , which is in qualitative agreement with Yu's recent determination [14,33].…”

supporting

confidence: 73%

See 1 more Smart Citation

Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

Harmon

Flatté

2013

Phys. Rev. Lett.

View full text Add to dashboard Cite

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.

show abstract

supporting

confidence: 73%

“…which has the form of a convolution; Rl (s) = Rl h R0 (s + Γ) R l 0 (s + Γ) in Laplace space. We build the polarization function from the different number of random rotations [22,31]:…”

mentioning

confidence: 99%

Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

Harmon

Flatté

2013

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…As also noticed earlier [8], the technique of muon spin rotation (mSR) eliminates the difficulty of quadrupolar broadening ͑S m 1͞2͒ and is, thereby, a priori the ideal method to study the dHvA domain phase. However, the spread in frequency of the precessing muons depends on the localization and dynamics of the m 1 in the given crystal at low temperatures, and it has to be checked first if this linewidth allows the desired frequency resolution.…”

mentioning

confidence: 96%

Observation of Diamagnetic Domains in Beryllium by Muon Spin Rotation Spectroscopy

et al. 1996

View full text Add to dashboard Cite

Spectroscopic evidence is given for the recurrent "domain phase" with oppositely magnetized regions in diamagnetic beryllium. A periodic splitting of the precession frequency of implanted muons in a Be single crystal was observed as the strength of the applied field H k ͗0001͘ varied near H 0 2.74 T. On sweeping H downwards, the doublet emerges and persists within more than one third of each de Haasvan Alphen cycle, the positions of the lines fixed, with the lower frequency (diamagnetic) component gaining and the higher (paramagnetic) one losing intensity. The line splitting gives DB ഠ 29 G for the induction difference in domains at T 0.8 K.

show abstract

“…The aim of this paper is to apply spin tomograms to muon spin rotation/relaxation/resonance experiments usually abbreviated to MuSR or acronym µSR. At present, MuSR method is primarily used to get insight about the microscopic behavior of materials and nanostructures (see the reviews [30][31][32]), although the origin of this method is due to experimental verification of the proposal that the weak interaction might violate parity symmetry, and measuring the anisotropy of muon decay predicted by V -A theory of weak interactions. Muons (µ) are utilized in µSR technique as probes.…”

Section: Introductionmentioning

confidence: 99%

MuSR method and tomographic-probability representation of spin states

Belousov¹,

Filippov²,

Gorelkin³

et al. 2010

J Russ Laser Res

View full text Add to dashboard Cite

Muon spin rotation/relaxation/resonance (MuSR) technique for studying matter structures is considered by means of a recently introduced probability representation of quantum spin states. A relation between experimental MuSR histograms and muon spin tomograms is established. Time evolution of muonium, anomalous muonium, and a muonium-like system is studied in the tomographic representation. Entanglement phenomenon of a bipartite muon-electron system is investigated via tomographic analogues of Bell number and positive partial transpose (PPT) criterion. Reconstruction of the muonelectron spin state as well as the total spin tomography of composed system is discussed.

show abstract

Study of metals by means of positive muons

Cited by 13 publications

References 8 publications

Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

Observation of Diamagnetic Domains in Beryllium by Muon Spin Rotation Spectroscopy

MuSR method and tomographic-probability representation of spin states

Contact Info

Product

Resources

About