Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Russo, U.; Kamalanathan, Deepak; Ielmini, Daniele; Lacaita, A.L.; Kozicki, Michael

doi:10.1109/ted.2009.2016019

Cited by 304 publications

(248 citation statements)

References 25 publications

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“…This is consistent with experimental investigations and recently reported simulation results on a similar system. [28,26] One can also find, that the overall switching dynamics of the electroforming cycle is close to realistic findings. Once electroformation is finished, it is interesting to notice that the low conductive state is realized by the absence of a few atoms only.…”

Section: Resultssupporting

confidence: 77%

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Dirkmann

Ziegler

Hansen

et al. 2015

Journal of Applied Physics

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In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO 2 /Pt sandwich-like thin film system. The developed model is not limited to i) fast time scale dynamics and ii) only one growth and dissolution cycle of metallic filaments. In particular, we present results from the simulation of consecutive cycles. We find that the numerical results are in excellent agreement with experimentally obtained data. Additionally, we observe an unexpected filament growth mode which is in contradiction to the widely acknowledged picture of filament growth, but consistent with recent experimental findings.

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Section: Resultssupporting

confidence: 77%

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Dirkmann

Ziegler

Hansen

et al. 2015

Journal of Applied Physics

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“…6 in Ref. 39) which could not simply be explained by a charge transfer or ion migration model. These findings might indicate that at lower applied voltages another process starts to dictate the overall switching behavior and it is reasonable to assume that nucleation processes might come into play.…”

Section: A Voltage Dependencementioning

confidence: 96%

“…However, going to lower overpotentials where the critical nucleus is sufficiently large, a classical representation could be more informative. 35,36 Recently, Russo et al 39 have studied the voltage dependence of the programming time for the "ON resistance switching" on a comparable system, Ag doped Ge-S (active layer thickness 60 nm). For applied cell voltages >0.4 V, they found a clear exponential decrease of the programming or switching time with increasing voltage.…”

Section: A Voltage Dependencementioning

confidence: 99%

“…For applied cell voltages >0.4 V, they found a clear exponential decrease of the programming or switching time with increasing voltage. Based upon a fit of their experimental data and the resulting fit parameters, Russo et al 39 suppose that at voltages >0.4 V the programming speed might be controlled by an electrochemical reaction like charge transfer or by ion migration processes. At voltages <0.4 V, however, considerable deviations were found (see Fig.…”

Section: A Voltage Dependencementioning

confidence: 99%

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On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

Soni

Meuffels

Staikov

et al. 2011

Journal of Applied Physics

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Currently, there is great interest in using solid electrolytes to develop resistive switching based nonvolatile memories (RRAM) and logic devices. Despite recent progress, our understanding of the microscopic origin of the switching process and its stochastic behavior is still limited. In order to understand this behavior, we present a statistical "breakdown" analysis performed on Cu doped Ge 0.3 Se 0.7 based memory devices under elevated temperature and constant voltage stress conditions. Following the approach of electrochemical phase formation, the precursor of the "ON resistance switching" is considered to be nucleation -the emergence of small clusters of atoms carrying the basic properties of the new phase which forms the conducting filament. Within the framework of nucleation theory, the observed fluctuations in the time required for "ON resistance switching" are found to be consistent with the stochastic nature of critical nucleus formation.

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“…Multilevel storage can enhance storage density, but requires a large enough resistance ratio between each state to enable an external circuit to distinguish between states. Multilevel storage can be achieved by controlling either compliance current (I comp ) or operating voltage [22,[24][25][26]. In our previous work [5], a WO 3 -based RRAM device with Cu/WO 3 /Pt structure was demonstrated to have multilevel storage capability.…”

Section: Multilevel Storagementioning

confidence: 99%

An overview of resistive random access memory devices

Long

Liu

et al. 2011

Chin. Sci. Bull.

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With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

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Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Cited by 304 publications

References 25 publications

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

An overview of resistive random access memory devices

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