Study of Occupational Sites and Dielectric Properties of Ho–Mg and Ho–Mn Substituted BaTiO<sub>3</sub>

Kishi, Hiroshi; Kohzu, Noriyuki; Iguchi, Yoshiaki; Sugino, Junichi; Kato, Makoto; Ohsato, Hitoshi; Okuda, Takashi

doi:10.1143/jjap.39.5533

Cited by 49 publications

(32 citation statements)

References 7 publications

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“…[7,9] In the case of smaller ionic size rare-earths (Dy, Ho, Er, Yb)-and Mn-substituted samples, we confirmed that the decrease of the lattice parameter and a shift of T c to higher temperatures due to oxidation of Mn 2+ by re-oxidation treatment was observed in the range in which the rare-earth ions preferentially occupied B-sites. It was determined that the occupational sites of rare-earth ions in BT lattice strongly affected the valence state of acceptors and dielectric properties.…”

Section: Introductionsupporting

confidence: 63%

“…This behavior is clearly different from the previous result for Ho-Mn-substituted BT solid solutions, which shows the decrease of the lattice parameter caused by oxidation of Mn. [7][8][9] To clarify the effect of V on the lattice parameter, the valency of V was examined. Ho-V-substituted samples showed the change of valency of V by re-oxidation, while La-V-substituted samples showed no change.…”

Section: Solubility and Dielectric Properties Of Rare Earth-and V-submentioning

confidence: 99%

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Effect of re-oxidation on dielectric properties in Ni-MLCC

et al. 2007

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The effect of re-oxidation treatment on the solubility of dopants and the dielectric properties of rareearths (La, Ho) and V-substituted BaTiO 3 solid solutions, assuming the shell phase of X7R dielectrics, was investigated. Ho-V-substituted samples showed larger increase of the lattice parameter and T c by re-oxidation treatment compared with La-V-substituted samples. Electron spin resonance measurements revealed that the oxidation of V 3+ to V 4+ or V 5+ appeared in the range in which the increase of lattice parameter by re-oxidation treatment was observed. This suggests that the increase of T c is due to the change of preferential occupational site of Ho ion from A-site to Bsite, being accompanied with the oxidation of V 3+ . We also investigated the effect of re-oxidation treatment on the electrical properties and microstructure in Ni-MLCC samples, using rare-earths (La, Ho, Yb) and acceptors (Mn, V) doped BaTiO 3 based X7R dielectrics. The change in temperature characteristic of the dielectric constant by reoxidation treatment was observed for the MLCC samples containing V with smaller content. In the case of Ho-V-and Yb-V-doped samples showed larger increase of the dielectric constant at around 120°C compared with La-V-doped samples. The relationship between the microstructure and electrical properties of the MLCC sample was investigated by impedance measurement at elevated temperature.

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Section: Introductionsupporting

confidence: 63%

Section: Solubility and Dielectric Properties Of Rare Earth-and V-submentioning

confidence: 99%

Effect of re-oxidation on dielectric properties in Ni-MLCC

et al. 2007

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“…Many studies have tried to elucidate the effects of oxygen vacancies on the dielectric relaxation [10,11], the resistance degradation [3,7,[12][13][14][15], and the occupational site of rareearth elements in BaTiO 3 [16][17][18]. On the other hand, few studies have reported the effect of oxygen vacancies on the microstructure and dielectric-temperature behavior in core/shell structured BaTiO 3 .…”

Section: Introductionmentioning

confidence: 99%

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Jeon

Kang

2015

J Electroceram

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The effect of oxidation on dielectric-temperature behavior of core/shell grained BaTiO 3 was studied in an attempt to reveal the prime governing parameter of dielectrictemperature behavior. BaTiO 3 samples doped with 3 mol% Y 2 O 3 or 3 mol% Dy 2 O 3 with the same effective charges were sintered in a reducing atmosphere (Po 2 <10 −13 ) and oxidized at 1050-1250°C for 10 h in air. In the Y-doped samples, as the oxidation temperature increased, the fraction of the grains with ferroelectric domains in the shell increased from 18 to 54 % and the residual strain decreased. With an increased domain fraction, the dielectric-temperature behavior became poor, and a dielectric peak appeared. On the other hand, all the Dy-doped and air-annealed samples exhibited relatively high fractions of grains with ferroelectric domains in the shell, 32 % at 1050°C and 63 % at 1250°C, indicating a considerable reduction of residual strain in all the samples. The temperature stability of the Dy-doped samples was poor, and there was a dielectric peak, irrespective of the oxidation temperature. This difference in dielectric response between the Ydoped and Dy-doped samples reveals that the prime factor governing the dielectric-temperature stability is the residual strain in the core/shell grains rather than the previously suggested factors of defect concentration, dopant concentration in the shell and the occupational sites of rare-earth dopants.

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“…There exist lots of works on the control of its polarization and piezoelectric properties by the doping of acceptor-type impurities such as aluminum (Al), iron (Fe), or manganese (Mn), etc. [16][17][18][19][20][21][22][23][24] Mn-doped barium titanate has especially attracted research interests because of (1) the multivalent character of Mn ions (Mn 4+ , Mn 3+ and Mn…”

Section: Introductionmentioning

confidence: 99%

Photocurrent Characteristics for Mn-doped Barium Titanate Ferroelectric Single Crystals

Inoue

Ishikawa

Kitanaka

et al. 2014

Trans. Mat. Res. Soc. Japan

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We investigated the photocurrent characteristics for ferroelectric single crystals of non-doped barium titanate (BT) and Mn-doped barium titanate (Mn-BT). The introduction of 90  domain structures into the BT crystals markedly raised the photocurrent, which suggests that the separation of photoinduced carriers is significantly enhanced around 90  domain walls (DWs). The Mn doping led to a drastic increase in the photocurrent, with photon energy less than the band gap. Density functional theory calculations show that the large photocurrent observed for the Mn-BT crystals originates from the electron excitation from the O-2p valence band to the Mn-e g defect level followed by the carrier (hole) injection.

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Study of Occupational Sites and Dielectric Properties of Ho–Mg and Ho–Mn Substituted BaTiO₃

Cited by 49 publications

References 7 publications

Effect of re-oxidation on dielectric properties in Ni-MLCC

Effect of re-oxidation on dielectric properties in Ni-MLCC

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Photocurrent Characteristics for Mn-doped Barium Titanate Ferroelectric Single Crystals

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Study of Occupational Sites and Dielectric Properties of Ho–Mg and Ho–Mn Substituted BaTiO3

Cited by 49 publications

References 7 publications

Effect of re-oxidation on dielectric properties in Ni-MLCC

Effect of re-oxidation on dielectric properties in Ni-MLCC

Oxidation-induced strain relaxation and related dielectric-temperature behavior in core/shell grained BaTiO3

Photocurrent Characteristics for Mn-doped Barium Titanate Ferroelectric Single Crystals

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Study of Occupational Sites and Dielectric Properties of Ho–Mg and Ho–Mn Substituted BaTiO₃