1997
DOI: 10.1007/s003390050510
|View full text |Cite
|
Sign up to set email alerts
|

Study of phase separation in Ti-Co-N thin films on silicon substrate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2002
2002
2021
2021

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 12 publications
(1 citation statement)
references
References 0 publications
0
1
0
Order By: Relevance
“…Such surface modifications permit improvement of the endurance of Ti6Al4V alloy due to the formation of hard Ti-Co intermetallic particles. The Ti–Co thin films were used also as diffusion barriers, or as an element of integrated circuits [24,25].…”
Section: Introductionmentioning
confidence: 99%
“…Such surface modifications permit improvement of the endurance of Ti6Al4V alloy due to the formation of hard Ti-Co intermetallic particles. The Ti–Co thin films were used also as diffusion barriers, or as an element of integrated circuits [24,25].…”
Section: Introductionmentioning
confidence: 99%