2006
DOI: 10.1016/j.tsf.2005.10.046
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Study of physical and photocatalytic properties of titanium dioxide thin films prepared from complex precursors by chemical vapour deposition

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Cited by 88 publications
(42 citation statements)
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“…It was shown by the XPS analysis that TiO 2 samples have an average stoichiometry between TiO 2.4 and TiO 2.6 and that besides Ti and O the significant amount of C in compare to the bulk have been found on the surface (~ 30 at.% and 15-20 at.% for the samples prepared from the Precursors A and B respectively), indicating the redistribution of carbon during thin-film growth. As it was shown earlier [7], several process parameters can affect the surface contamination by carbon, including the synthesis temperature, the oxygen concentration in the vapour phase during film growth, the type of precursor etc. It was shown [7] that the results of LIMS and XPS analysis are identical for the films prepared on glass, fused quartz and silicon substrates.…”
Section: Lims Xps and Xrd Analysis Of Samples It Wasmentioning
confidence: 86%
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“…It was shown by the XPS analysis that TiO 2 samples have an average stoichiometry between TiO 2.4 and TiO 2.6 and that besides Ti and O the significant amount of C in compare to the bulk have been found on the surface (~ 30 at.% and 15-20 at.% for the samples prepared from the Precursors A and B respectively), indicating the redistribution of carbon during thin-film growth. As it was shown earlier [7], several process parameters can affect the surface contamination by carbon, including the synthesis temperature, the oxygen concentration in the vapour phase during film growth, the type of precursor etc. It was shown [7] that the results of LIMS and XPS analysis are identical for the films prepared on glass, fused quartz and silicon substrates.…”
Section: Lims Xps and Xrd Analysis Of Samples It Wasmentioning
confidence: 86%
“…In this study, TiO 2 thin films of rutile (E g =3.0 eV) and anatase (E g =3.2 eV) single phases were prepared by CVD method at relatively low temperatures (400-450 ºC) without any further annealing to prevent SiO 2 layer formation [7]. Thin films were characterized by studying the bulk chemical composition, as well as surface chemical composition and crystal structure.…”
Section: Introductionmentioning
confidence: 99%
“…3(a) can be fitted with a strong peak at 529.9 eV and a weak peak at 531.6 eV. The strong peak is assigned to metallic oxide, and the weak one can be attributed to hydroxyl groups, chemisorbed oxygen or organic oxygen on the surface of the sample [39][40]. The appearance of Y 3d 5/2 peak at 157.8 eV and Y 3d 3/2 peak at 159.7 eV in the XPS spectra of Fig.…”
Section: Preparation and Characterization Of Y 2 Ti 2 O 7 Npsmentioning
confidence: 99%
“…Under ambient conditions, macrocrystalline rutile is thermodynamically stable relative to macrocrystalline anatase and brookite [1]. TiO 2 thin films can be deposited by several techniques, such as sputtering, chemical vapor deposition, pulsed laser deposition, and sol gel methods [3,6,7]. In order to deposit rutile phase using techniques like CVD, sol gel, etc., high temperature is necessary.…”
Section: Introductionmentioning
confidence: 99%
“…In order to deposit rutile phase using techniques like CVD, sol gel, etc., high temperature is necessary. But due to lattice mismatch and thermal expansion mismatch between rutile phase and the stainless steel substrate, rutile films cannot be deposited with good adhesion on stainless steel substrates [7]. However a layered film structure (TiO 2 or Ti) shows good adhesion on stainless steel substrates.…”
Section: Introductionmentioning
confidence: 99%