Study of Pt Bottom Electrodes using High-Temperature Sputtering for Ferroelectric Memories with SrBi₂Ta₂O₉ (SBTO) Film

Abstract

Pt bottom electrodes for SrBi2Ta2O9 (SBTO) capacitors have been investigated for use in nonvolatile memories. A Pt thin film which is sputtered at a temperature of 300°C consists of enlarged columnar grains, while a film sputtered at room temperature consists of fibrous columnar grains. The formation mechanism of enlarged grains of the Pt film sputtered at 300°C is due to the fact that the film structure changes with substrate temperature based on the structure-zone model. The Pt bottom electrode which consists of the enlarged grains results in a decrease in the Ti diffusion path, leading to effective adhesion of Pt to a SiO2 film.

Investigation of Pt/Ti bilayer on SiNx/Si substrates for thermal sensor applications

“…Intensity is logarithmically represented and we can observed that the two films are ͑111͒ oriented. 4 All the electron beam evaporated films exhibit tensile stress. 2͒.…”

“…Platinum is generally used because of its chemical stability in high temperature and its high temperature coefficient of resistance ͑TCR͒. [1][2][3][4][5]10 In this study, Pt/Ti bilayer deposition by ac sputtering and electron beam evaporation techniques is reported for the substrate temperature range from room temperature to 400°C. [6][7][8][9] Therefore, Pt/Ti must have a good adhesion onto a SiN x /Si substrate to prevent the peeling layer in the KOH solution and it must have a high TCR to increase the sensor sensitivity.…”

Chemically derived seeding layer for {100}-textured PZT thin films

“…Platinum has been demonstrated as a versatile electrode material for ferroelectric materials in general [4][5][6][7][8][9]. The development of [111] texture for a perovskite as PZT on Pt(111) is expected.…”