“…Several new techniques have yielded promising results toward establishing peak temperature for GaN devices in combination with detailed modeling and infrared (IR) imaging (Green et al, 2008;Raj & Bindra, August 2013;Salem, Ibitayo, & Geil, 2007;Sommet, Mouginot, Quere, Ouarch, & Camiade, 2012;J. Zhang & Zhang, 2013).…”