Study of silica nano-pattern erosion in H2SO4-H2O2 mixture using spectroscopic ellipsometry

Yu, Zhaoning; Kurataka, Nobuo; Tran, Hoang; Gauzner, Gene

doi:10.1116/1.4732121

Cited by 1 publication

(1 citation statement)

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“…However, in these cases, pattern transfer to the substrate was not demonstrated. This is critical as high volume manufacturing using nanoimprint lithography requires robust templates that can be used repeatedly thousands of times with occasional cleaning to remove organic contaminants [19], something that may not be possible using spacer-defined templates. More broadly, the application of spacer-based patterning for various nanotechnology applications may require pattern transfer to the substrate or another layer in order to create functioning devices.…”

Section: Introductionmentioning

confidence: 99%

Transfer of self-aligned spacer patterns for single-digit nanofabrication

Doerk¹,

Gao²,

Wan³

et al. 2015

Nanotechnology

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We report the transfer of sub-10 nm half-pitch grating patterns created through a combination of block copolymer directed self-assembly and sidewall spacer-based self-aligned double patterning into Si substrates. Low substrate bias reactive ion etching of TiOx conformally deposited onto carbon mandrels using atomic layer deposition renders distinct, pitch-halved spacers with minimal etch byproduct redeposition. Independent spacer and mandrel width control and the use of an underlying CrNx hard mask deposited by reactive sputtering facilitates etching of Si lines with low roughness and fine placement control. The insights into pattern transfer presented here are directly applicable to the fabrication of rectangular bit pattern nanoimprint templates at densities above 1.5 Td in(-2).

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Section: Introductionmentioning

confidence: 99%