Study of silicon solar cell at different intensities of illumination and wavelengths using impedance spectroscopy

Kumar, Sonu; Singh, Preetam; Chilana, G. S.

doi:10.1016/j.solmat.2009.07.002

Cited by 57 publications

(20 citation statements)

References 8 publications

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“…1. The values of the series resistances (R s ) obtained from the shift of the impedance curves on the real axis are found quite close to the values (0.4-0.6 O) deduced from the illuminated I-V characteristics and also by using the procedure defined in [7].…”

Section: Resultssupporting

confidence: 80%

Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures

Kumar

Sareen

Batra

2010

Solar Energy Materials and Solar Cells

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Section: Resultssupporting

confidence: 80%

Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures

Kumar

Sareen

Batra

2010

Solar Energy Materials and Solar Cells

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“…The value of , , and corresponding obtained from the measured impedance spectra under different bias voltage conditions is listed in Table 3. These values are in good agreement with the existing literature for silicon solar cells [33,35].…”

Section: Theory Validation and Characterization Of Lcpv Modulesupporting

confidence: 92%

Exergy, Energy, and Dynamic Parameter Analysis of Indigenously Developed Low-Concentration Photovoltaic System

Yadav

Tripathi

Kumar

2013

International Journal of Photoenergy

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Piecewise linear parabolic trough collector (PLPTC) is designed and developed to concentrate solar radiation on monocrystalline silicon based photovoltaic module. A theoretical model is used to perform electrical energy and exergy analysis of low-concentration photovoltaic (LCPV) system working under actual test conditions (ATC). The exergy efficiency of LCPV system is in the range from 5.1% to 4.82% with increasing rate of input exergy rate from 30.81 W to 96.12 W, when concentration ratio changes from 1.85 to 5.17 Sun. Short-circuit current shows increasing trend with increasing input exergy rate of≈0.011 A/W. Power conversion efficiency decreases from 7.07 to 5.66%, and open-circuit voltage decreases from 9.86 to 8.24 V with temperature coefficient of voltage≈-0.021 V/K under ATC. The results confirm that the commercially available silicon solar PV module performs satisfactorily under low concentration.

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“…The overall time constant (s IS ) was then calculated as the product R SH C (s), being essentially equal to the value calculated as 1/2pf max . [64][65][66][67][68][69] s was estimated to be 1.8 ms and 0.221 ms for Cell-04 and Cell-05, respectively. The capacitance C (or CPE) derived from the above curve fitting of the Z¢ versus ÀZ¢¢ semicircles in this work is an overall value, without trying to separate the recombination and diffusion terms (i.e., C c and C dl ).…”

Section: Device Propertiesmentioning

confidence: 97%

“…The capacitance C (or CPE) derived from the above curve fitting of the Z¢ versus ÀZ¢¢ semicircles in this work is an overall value, without trying to separate the recombination and diffusion terms (i.e., C c and C dl ). Therefore, R SH C will be referred to simply as the overall time constant; to obtain the minority-carrier lifetime using this method one needs to subtract the junction time constant of R r C c (where R r is the recombination resistance) from this overall time constant s. 64 More details on IS analysis and its applications for different types of solar cells including Si, 66 CdTe, 67,68 Finally, the photogenerated minority-carrier lifetime s was found from the OCVD for low-level photon injection using the relation described elsewhere. 53,75 The s values estimated from the OCVD for SnS solar cells Cell-04 and Cell-05 are shown in Fig.…”

Section: Device Propertiesmentioning

confidence: 99%

Junction and Back Contact Properties of Spray-Deposited M/SnS/In2S3/SnO2:F/Glass (M = Cu, Graphite) Devices: Considerations to Improve Photovoltaic Performance

Patel

Ray

2014

Journal of Elec Materi

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SnS/In 2 S 3 heterojunction devices were fabricated entirely by chemical spray pyrolysis in a superstrate configuration on SnO 2 :F/glass. The SnS/In 2 S 3 junction was found to exhibit strong rectification behavior, and the MottSchottky characteristics showed it was abrupt. The photovoltaic behavior of the junction was investigated under air mass 1.5G illumination, showing a short-circuit current of 4.8 mA/cm 2 and an open-circuit voltage of 0.29 V, reportedly the highest to date among similar devices with a Cd-free buffer layer and processed by a nonvacuum technique. However, the device suffers from low fill factor due to high series resistance originating from interface inhomogeneities. A Cu back contact was associated with a low level of inhomogeneities at the interface, as demonstrated by impedance analysis.

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Study of silicon solar cell at different intensities of illumination and wavelengths using impedance spectroscopy

Cited by 57 publications

References 8 publications

Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures

Study of C–V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures

Exergy, Energy, and Dynamic Parameter Analysis of Indigenously Developed Low-Concentration Photovoltaic System

Junction and Back Contact Properties of Spray-Deposited M/SnS/In2S3/SnO2:F/Glass (M = Cu, Graphite) Devices: Considerations to Improve Photovoltaic Performance

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