2009
DOI: 10.1016/j.tsf.2008.10.006
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Study of SrTiO3 thin films grown by sputtering technique for tunnel barriers in quasiparticle injection contacts

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Cited by 2 publications
(2 citation statements)
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“…Mor an et al reported G(T) and R(T) measurements for thin layers of STO (2-30 nm) in YBa 2 Cu 3 O 7-x / SrTiO3/Au structures. 37 The resistivity of 4 nm STO was found between 2 and 13 Â 10 6 X cm for RT to 4.2 K temperatures, respectively. G(T) measurements showed that conductivity is increasing with the STO barrier layer thickness which is in the range of 10 À3 to 10 À1 X À1 cm À1 , for this study they have used 8, 20, and 30 nm STO layer, and temperatures were in the range of 4.2 to 300 K. In our study, frequency dependent conductivities G(f) of STO-RT, STO-300, and STO-800 are 2.59 Â 10 À3 , 1.45 Â 10 À3 , and 1.54 Â 10 À4 X À1 cm À1 at 1 kHz, respectively.…”
Section: Electrical Propertiesmentioning
confidence: 93%
“…Mor an et al reported G(T) and R(T) measurements for thin layers of STO (2-30 nm) in YBa 2 Cu 3 O 7-x / SrTiO3/Au structures. 37 The resistivity of 4 nm STO was found between 2 and 13 Â 10 6 X cm for RT to 4.2 K temperatures, respectively. G(T) measurements showed that conductivity is increasing with the STO barrier layer thickness which is in the range of 10 À3 to 10 À1 X À1 cm À1 , for this study they have used 8, 20, and 30 nm STO layer, and temperatures were in the range of 4.2 to 300 K. In our study, frequency dependent conductivities G(f) of STO-RT, STO-300, and STO-800 are 2.59 Â 10 À3 , 1.45 Â 10 À3 , and 1.54 Â 10 À4 X À1 cm À1 at 1 kHz, respectively.…”
Section: Electrical Propertiesmentioning
confidence: 93%
“…STO is desirable because of its chemical and structural compatibility with YBCO that reduces interfacial strain. 10 This interface quality is of utmost importance for superconductor devices because of the ~2 nm coherence length, which means that any structural imperfections on this length scale can fatally impact the device. 11 The performance of these heterostructures are therefore closely dependent on the growth of atomically smooth films on the substrates.…”
Section: Introductionmentioning
confidence: 99%