Study of structural, electrical, and photoluminescent properties of SrCeO3 and Sr2CeO4

Yadav, Dharmendra Kumar; Kumar, Upendra; Upadhyay, Shail

doi:10.1007/s40145-019-0320-x

Cited by 42 publications

(20 citation statements)

References 45 publications

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“…Where, is the conductivity of ion, is the conductivity of hole, and is the conductivity of electrons and represents mobility and its subscript specify the type of charge. The activation energy of sample ZF-0 was determined to be 0.87 eV, which falls within the range of activation energy predicted for the migration of doubly-ionized oxygen vacancies ( ⋅⋅ ) in perovskite oxides [61]. According to equation ( 11), total conductivity is affected not only on charge carrier concentration but also on the mobility of distinct charge carriers.…”

Section: Dielectric and Dissipation Factor Study Of Sintered Pelletssupporting

confidence: 64%

Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Cheema

Yadav

Maurya

et al. 2021

J Mater Sci: Mater Electron

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Samples with doping of Mn (0, 2, and 4%) in ZnFe2O4 were prepared by sol-gel chemical route at 80 o C. X-ray powder diffraction and Raman spectrum analysis were used to determine the preliminary phase of obtained samples. W-H and SSP plots were used to determine the crystallite size and micro-strain of samples. Using zeta potential and scanning electron microscope, the surface charge and morphology of the prepared samples were studied. The optical bandgap of sample suggested that it was semiconducting.The dielectric characteristics of samples were examined as a function of temperature at various frequencies (1 KHz, 10 KHz, 100 KHz, and 1 MHz) (60-600 o C). Dielectric study revealed the presence of interfacial and orientational polarization, with dielectric constants and dissipation factors ranging from (0.7-460) to (0.3-0.8), remain thermally stability up to 300 o C. In samples ZF-0, ZF-2, and ZF-4, the thermal dependence of DC conductivity demonstrates Arrhenius transport with one, two, and three regions of conduction, respectively. The sources of charge carrier in samples were ⋅⋅ , ′ and dipole defects ( ⋅⋅ − 2 2+ 3+ ′ ) and (2 3+ 2+ . − 2 2+ 3+ ′ ). The current work could help identify possible applications in semiconductor devices, thermally stable capacitors, and as mixed ionic electronic conductors in solid oxide fuel cells.

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Section: Dielectric and Dissipation Factor Study Of Sintered Pelletssupporting

confidence: 64%

Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Cheema

Yadav

Maurya

et al. 2021

J Mater Sci: Mater Electron

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“…The broad photoluminescence emission centered at ca. 450 nm could be attributed to the band–band recombination of the photogenerated charge carriers with the emission photon energy equal to its band gap energy. − With the decoration of Bi 2 WO 6 , the PL emission intensity of the h -WO 3 /Bi 2 WO 6 -20-1 sample was obviously suppressed compared with that of the h -WO 3 sample. It is well known that the PL emission intensity generally reflects the photogenerated charge carrier recombination probability, and a lower emission intensity indicates a lower recombination probability.…”

Section: Results and Discussionmentioning

confidence: 99%

Photoirradiation-Induced Capacitance Enhancement in the h-WO₃/Bi₂WO₆ Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect

Yang

Gao

et al. 2021

ACS Appl. Mater. Interfaces

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Recently, photoassisted charging has been demonstrated as a green and sustainable approach to successfully enhance the capacitance of supercapacitors with low cost and good efficiency. However, their light-induced capacitance enhancement is relatively low and is lost quickly when the illumination is off. In this work, a novel active material system is developed for supercapacitors with the photoassisted charging capability by the decoration of a small amount of Bi 2 WO 6 nanoparticles on an h-WO 3 submicron rod surface in situ, which forms a typical type II band alignment heterostructure with a close contact interface through the co-sharing of W atoms between h-WO 3 submicron rods and Bi 2 WO 6 nanoparticles. The photogenerated charge carrier separation and transfer are largely enhanced in the h-WO 3 /Bi 2 WO 6 submicron rod electrode, which subsequently allows more charge carriers to participate in its photoassisted charging process to largely enhance its capacitance improvement under simulated solar illumination than that of the h-WO 3 submicron rod electrode. Furthermore, the h-WO 3 /Bi 2 WO 6 submicron rod electrode could retain its photoinduced capacitance enhancement in the dark for an extended period of time from the photocatalytic memory effect. Thus, our work provides a solution to the two major drawbacks of reported supercapacitors with the light-induced capacitance enhancement property, and supercapacitors based on active materials with the photocatalytic memory effect could be utilized in various technical fields.

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“…The excitation peak is located in the near-ultraviolet region of 345 nm, which can be a potential material in near UV excitation LED filed. 34 Figure 6C is the emission spectra (excited at 345 nm) of samples with various Ce ion concentrations. The highest intensity of the emission light is in 1 wt.%, then drops sharply with the increase of the doping concentration.…”

Section: Effects Of Heat Treatment On Optical Properties Of Ce-doped ...mentioning

confidence: 99%

Microstructures and luminescent regulation of Ce‐doped silicate glasses with high transmittance and thermal stability

Huang

Yuan

et al. 2021

Int J Applied Ceramic Tech

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The traditional model for wLEDs usually encapsulates the phosphor and resin mixture on the InGaN blue-emitting chip. However, the poor thermal stability of silicone resin will lead to the reduction of the luminescent intensity of the wLED devices. Glass has excellent thermal stability and transparency, which is a promising alternative to resins. In this work, Ce-doped silicate luminescent glasses have been developed by a high-temperature melting quenching method in air atmosphere. The luminescent intensity can be enhanced by increasing the heat treatment temperature and extending the heat treatment time in 10%H 2 /Ar atmosphere because Ce 4+ ions can be reduced to Ce 3+ ions. However, when the heat treatment temperature reaches 850 • C, the generation of precipitates in the glass can reduce the luminescent intensity. The transmittance of glass can reach 87%, and the highest luminous intensity obtained when heat treated at 800 • C.The glass transition temperature is 740 • C and the thermal conductivity of the glass is .95 W m −1 K −1 , which is about five times higher than that of resin. The results show that the emerging Ce-doped silicate luminescent glass could be the potential material for wLED applications.

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Study of structural, electrical, and photoluminescent properties of SrCeO3 and Sr2CeO4

Cited by 42 publications

References 45 publications

Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Photoirradiation-Induced Capacitance Enhancement in the h-WO₃/Bi₂WO₆ Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect

Microstructures and luminescent regulation of Ce‐doped silicate glasses with high transmittance and thermal stability

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Study of structural, electrical, and photoluminescent properties of SrCeO3 and Sr2CeO4

Cited by 42 publications

References 45 publications

Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect

Microstructures and luminescent regulation of Ce‐doped silicate glasses with high transmittance and thermal stability

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Photoirradiation-Induced Capacitance Enhancement in the h-WO₃/Bi₂WO₆ Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect