Study of surface exfoliation induced by hydrogen implantation and annealing in GaSb (100) substrates

Pathak, Ravi; Dadwal, U.; Kapoor, A. K.; Vallet, Maxime; Claverie, A.; Singh, Rajendra

doi:10.1016/j.mssp.2021.105998

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2022

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“…This method has been extended to the area of compound semiconductors, such as Si-based InP, SiC, GaN, and Ga 2 O 3 , LiTbO 3 . [12][13][14][15][16] Some researches of the exfoliation or blistering behaviors of GaSb under different ion implantation conditions have been conducted, [17][18][19] but no report shows that the highquality GaSb layer has been transferred onto the Si substrate successfully by ion-slicing technique so far.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Liu¹,

Lin²,

Shen³

et al. 2022

Chinese Phys. B

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Integration of the high-quality GaSb layer on the Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, the suitable ion implantation fluence of 5×1016 cm-2 H ions for GaSb layer transfer was confirmed. Combined with the strain change and the defect evolution, the blistering and exfoliation processes of GaSb during annealing was revealed in detail. With the direct wafer bonding, the GaSb layer was successfully transferred onto (100) Si substrate covered by 500-nm thickness thermal oxide SiO2 layer. After the post-annealing at 200 ℃, the GaSb layer showed high crystalline quality with only 77 arcsec for the full width at half maximum (FWHM) of the X-ray rocking curve (XRC).

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