Study of test structures of a molecular memory element

Kriger, Yu. G.; Yudanov, N. F.; Игуменов, И. К.; Vashchenko, S. B.

doi:10.1007/bf00752875

Cited by 14 publications

(6 citation statements)

References 3 publications

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“…Reversible switching between different resistance states in solid-state materials is an important phenomenon from the point of view of both in fundamentals and applications. The switching effect between high-resistance and low-resistance states was reported in ZnSe-Ge heterostructures, 1) amorphous Si, 2) organic polymers [3][4][5] and then various metal oxides such as Cr-doped SrTiO 3 , 6) TiO 2 , 7) Nb 2 (Ta 2 )O 5 8) and NiO. 9) In most cases, the effect can be driven by moderate voltage and shows nonvolatile behavior, which provides a promising opportunity for application in resistive randomaccess memory (RRAM).…”

mentioning

confidence: 88%

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

Kim

Choi

et al. 2005

Jpn. J. Appl. Phys.

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We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K)=1.6. The value of ε(ω) is drastically different from that of the high-R state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ω p 2 in the metallic low-R state is estimated to be 1.2×109/cm3.

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mentioning

confidence: 88%

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

Kim

Choi

et al. 2005

Jpn. J. Appl. Phys.

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“…The organic materials that have been studied include polymers [8][9][10] such as polystyrene and polyimide, chargetransfer complex materials such as metal-tetracyanoquinodimethane ͑TCNQ͒ complex, 11 blends of two materials that act as donor and acceptor, 12 and organic copper ion composites. 13 Recently, we reported the invention of a unique organic electrical bistable device ͑OBD͒ that showed reliable electrical switching and memory effects.…”

Section: Introductionmentioning

confidence: 99%

Experimental study on thickness-related electrical characteristics in organic/metal-nanocluster/organic systems

Pyo

et al. 2005

Journal of Applied Physics

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A photoelectron spectroscopy study of tunable charge injection barrier between metal/organic interface Appl. Phys. Lett. 93, 023302 (2008); 10.1063/1.2957979 Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices Nonvolatile electrical bistability of organic/metal-nanocluster/organic system Appl.Organic bistable devices with the trilayer structure, organic/metal-nanocluster/organic, interposed between two electrodes have been systematically studied by varying the thickness of the organic layers and the metal-nanocluster layer. Devices fabricated in this fashion exhibit either electrical bistability or current step, depending on the thickness of the metal-nanocluster layer. Electrical bistable devices have been studied by fixing the metal-nanocluster layer thickness at 20 nm and changing the organic-layer thickness from 20 to 60 nm. Device injection current at the on state shows an exponential decrease with an increasing organic-layer thickness, suggesting that the electron transmission probability of the devices decreases with an increasing thickness of the organic layer. This is in agreement with theoretical calculations based on the single-band Hubbard model. The evolution of the electrical current step is observed for devices fabricated by fixing the organic-layer thickness at 50 nm and changing the metal-nanocluster layer thicknesses ͑2, 4, and 8 nm͒. The discontinuous metal-nanocluster layer is believed to lead to the observed current step. When the metal-nanocluster layer is thick enough resonant tunneling occurs between nanoclusters causing positive and negative charges to be stored on the opposite sides of the metal-nanocluster layer inducing electrical bistability. Discussions of the observed phenomena are presented.

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“…Much work has been done in the field, starting already in the late sixties on various materials such as amorphous semiconductors [1,2,3], ZnSeGe heterojunctions [4] as well as on several binary oxides [5,6,7,8,9] to produce simple crosspoint memory arrays with bit and word lines. More recently, work on porous Si [10] and polymers [11,12,13] has also demonstrated electrical bistability. The enhanced interest in perovskites since the discovery of high-temperature superconductivity in the cuprates and the giant and colossal magnetoresistance in the manganites has generated a tremendous effort in the investigation of oxide thin films.…”

Section: Introductionmentioning

confidence: 99%

Electrical current distribution across a metal–insulator–metal structure during bistable switching

Rossel

Meijer

Brémaud

et al. 2001

Journal of Applied Physics

202

106

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Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect. 61.16.Bg, 72.20.Jv, 73.40.Rw

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Study of test structures of a molecular memory element

Cited by 14 publications

References 3 publications

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

Experimental study on thickness-related electrical characteristics in organic/metal-nanocluster/organic systems

Electrical current distribution across a metal–insulator–metal structure during bistable switching

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