Study of the damage produced in 6H-SiC by He irradiation

Optical and structural properties of 6H–SiC irradiated by coimplantation

“…4(a)). The transmittance of all the samples is almost zero below the wavelength of $400 nm, which is also observed by [26,27]. The transmittance increases with wavelength after $400 nm except a dip around 620 nm which is due to nitrogen doping of the pristine SiC wafers [28].…”

He–vacancy interaction and multiple He trapping in small void of silicon carbide

“…Zhang et al [13] have investigated the recovery of lattice damage of SiC crystals that were implanted by 100 keV He ion at 600 K and subsequently annealed at different temperatures by Raman spectrometry and Fourier transform infrared spectrometry. Their results show that the damage induced by high energy He ion implantation in the lattice is closely related to the fluence [14,15]. Meanwhile, first-wall materials are also exposed to high energy neutrons and high fluxes of He escaping from the edge plasma inside reactor vessels [2].…”

Transmission electron microscopy investigations of bubble formation in He-implanted polycrystalline SiC

“…For example, in fusion power, it was reported that the He generation rate in SiC as a first wall material would be about 16,000 appm/yr at 10 MW/m 2 [4]. Because of the low solubility of He atoms in SiC, a certain concentration of He atoms that are trapped in the matrix in the form of helium-vacancy clusters would form bubbles upon annealing [5,6]. He bubbles can cause degradation of material properties [1,7,8], such as the phenomenon of He embrittlement and the deleterious effect of thermal properties.…”