Study of the effect of plasma power on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Zheng, Youdou; Lim, Jae‐Hong; Chu, Sheng; Zuo, Zheng-Wei; Liu, J.L.

doi:10.1016/j.apsusc.2008.09.068

Cited by 20 publications

(9 citation statements)

References 39 publications

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“…Regular Knudsen effusion cells filled with elemental Zn (6 N) and Mn (5.5 N) were used as sources. An electron cyclotron resonance plasma tube supplied with O 2 (5 N) was used as the oxygen source [43]. The substrate temperature was kept at $300 1C during the growth.…”

Section: Methodsmentioning

confidence: 99%

“…Besides the MnZnO peaks, a sapphire (0 0 0 6) peak is also observed at 42.01 from the substrate. Whether the sapphire substrate peak shows up [43,48,49] or not [40][41][42] depends on the thickness of the ZnO layer on top. The XRD peak position and full-width-at-half-maximum (FWHM) of the MnZnO (0 0 0 2) peaks from all the five samples are at 34.81 and $ 0.301, respectively.…”

Section: Structural Propertiesmentioning

confidence: 98%

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Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

Zheng

Zuo

Zhou

et al. 2011

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 98%

Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

Zheng

Zuo

Zhou

et al. 2011

Journal of Crystal Growth

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“…The visible photoluminescence (PL) at approximately 2.5 eV (approximately 495 nm) originated from intrinsic defects, makes ZnO suitable for applications in field emission and vacuum fluorescent displays [3]. Many techniques including hydrothermal synthesis, pulsed laser deposition, sputtering, molecular beam epitaxy, chemical vapor deposition and oxidation of metallic zinc powder have been used to prepare ZnO in different forms and structures for various applications [4][5][6][7][8][9][10]. Nanoparticulate form enhances the catalytic activity due to its large surface area, presence of vacancies and uncoordinated atoms at corners and edges.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Synthesis of Monodisperse ZnO Nanoparticles Using Ultrasonically Atomized Precursor Mist in Simple Chemical Route

2019

IJNN

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Monodisperse zinc oxide (ZnO) nanoparticles were synthesized using ultrasonically atomized precursor mist in simple chemical route at low temperature. Analytical grade sodium hydroxide and zinc chloride were dissolved in 100 ml methanol. Zinc chloride precursor solution was converted into very fine mist (atomized) using a nozzle (Sono-Tek Corporation, U.S.A.) operated at ultrasonic frequency of 120 KHz. Fine mist droplets were added slowly (50ml/ hour) into sodium hydroxide solution in 2 hours. The NaOH solution in beaker turned slowly into white product due to addition of zinc chloride. The white product was kept in constant temperature bath at 90°C for 3 hours. The white product was washed five times using double distill water and dried in oven for 2 hours. Different powder samples were synthesized using same procedure by changing the molarity of sodium hydroxide keeping the molarity of zinc chloride and other preparative conditions same. The structural, microstructural, thermal and optical properties of fine powders were analyzed using X Ray Diffractometer, Scanning Electron Microscopy, Simultaneous Thermal Analyzer, UV-Vis Spectroscopy and Photoluminescence Spectroscopy. Fine ZnO nanorods, elongated and spherical nanoparticles were observed due to change in molarity of NaOH. The results are discussed and interpreted.

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“…Critical parameters for PAMBE growth of ZnO are Zn flux, O 2 flow, substrate temperature, and plasma power [8]. It has been reported that the growth rate of ZnO increases with the increase of plasma power [9,10]. For the growth with RF plasma sources, with a fixed total holes area (same conductance) of the aperture plate, the number of holes has also been shown to be correlated to the growth rate [10].…”

Section: Introductionmentioning

confidence: 99%

Increasing ZnO Growth Rate by Modifying Oxygen Plasma Conditions in Plasma-Assisted Molecular Beam Epitaxy

Zhao¹,

Shen²

2012

WJCMP

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The authors report that the growth rate of ZnO can be significantly increased by modifying the oxygen plasma conditions in plasma-assisted molecular beam epitaxy. Both the aperture diameter and the distance between the plasma source and the substrate affect the growth rate and the quality of the ZnO films. A short source to substrate distance is essential in achieving higher growth rate, which is explained by reduced chance of oxygen atom collisions to accommodate the short oxygen mean free path at high background pressure. At a shorter source to substrate distance, the growth rate is higher with a larger aperture diameter. The quality of the ZnO thin films grown under different conditions is assessed by x-ray diffraction and room-temperature photoluminescence measurements

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Study of the effect of plasma power on ZnO thin films growth using electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Cited by 20 publications

References 39 publications

Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy

Room Temperature Synthesis of Monodisperse ZnO Nanoparticles Using Ultrasonically Atomized Precursor Mist in Simple Chemical Route

Increasing ZnO Growth Rate by Modifying Oxygen Plasma Conditions in Plasma-Assisted Molecular Beam Epitaxy

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